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STMicroelectronics N-Channel IGBT Insulated Gate Bipolar Transistor, 20A, 600V, 3-Pin TO-220 Through Hole STGP10NC60KD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STGP10NC60KD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 25W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- This IGBT device offers a maximum continuous collector current of 20 amperes.
- It supports a maximum collector-emitter voltage of 600 volts for high voltage applications.
- The device has a power dissipation rating of 25 watts to handle thermal loads efficiently.
- Operates efficiently at switching speeds up to 1 MHz for fast switching requirements.
- The transistor features a maximum gate-emitter voltage of 20 volts for reliable gate control.
- Its maximum collector-emitter saturation voltage is limited to 2.5 volts to reduce conduction losses.
- Designed with a 3-pin TO-220 package type suitable for through hole mounting.
- Operable in a wide temperature range from -55°C to 150°C for demanding environments.
Product Description
STMicroelectronics STGP10NC60KD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring high efficiency and fast switching.
Featuring a maximum continuous collector current of 20 A and a maximum collector-emitter voltage rating of 600 V, this IGBT suits industrial and electronic circuits where reliable high-voltage switching is necessary.
The device is housed in a 3-pin TO-220 package enabling easy mounting through standard holes on printed circuit boards, making it versatile for various assembly methods.
Its fast switching speed of up to 1 MHz and low collector-emitter saturation voltage of 2.5 V help minimize power losses and improve device efficiency in high-frequency applications.
Operating temperatures range from -55°C to 150°C, providing resilience in harsh industrial, automotive, and commercial environments. This transistor supports a maximum gate-emitter voltage of 20 V, ensuring stable gate control.
The IGBT’s compact dimensions (10.4 mm length, 4.6 mm width, and 9.15 mm height) allow integration in space-sensitive electronic assemblies. No special certifications or automotive standards apply to this device, focusing on general-purpose power semiconductor use.
Common applications for the STGP10NC60KD include power management, motor control, industrial automation, and switching power supplies in industrial and electronic equipment. Explore EnvMart’s Semiconductor and IGBT product categories for a wide range of related power components and power electronics devices.
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Frequently Asked Questions
The maximum continuous collector current for the STGP10NC60KD is 20 amperes.
This model supports a maximum collector-emitter voltage of 600 volts, suitable for high voltage applications.
The power dissipation rating for the STGP10NC60KD is 25 watts, allowing it to handle thermal loads efficiently.
It operates efficiently at switching speeds of up to 1 MHz, making it suitable for fast switching requirements.
The maximum gate-emitter voltage is 20 volts, ensuring reliable gate control during operation.
The dimensions of this IGBT are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
It operates within a wide temperature range from -55°C to 150°C, suitable for demanding environments.
The STGP10NC60KD is housed in a 3-pin TO-220 package type, designed for through hole mounting.
Common applications include power management, motor control, industrial automation, and switching power supplies.
The maximum collector-emitter saturation voltage is limited to 2.5 volts, which helps reduce conduction losses.
This model features a pin count of 3, suitable for various assembly methods.
No special certifications or automotive standards apply to this device; it is focused on general-purpose power semiconductor use.
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