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Infineon N-Channel IGBT 40 A 650 V 3-Pin TO-247 Through Hole IHW40N65R5XKSA1

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Infineon N-Channel IGBT 40 A 650 V 3-Pin TO-247 Through Hole IHW40N65R5XKSA1

Name: Infineon N-Channel IGBT 40 A 650 V 3-Pin TO-247 Through Hole IHW40N65R5XKSA1
Brand: Infineon
SKU: 184357
Price: 2.6 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IHW40N65R5XKSA1
Mount Type	Through Hole
Series	Resonant Switching
Energy Rating	1.91mJ
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Standards/Approvals	RoHS, JESD-022
Pin Count	3
Maximum Continuous Collector Current Ic	40A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	1.7V
Channel Type	N
Maximum Power Dissipation Pd	230W
Maximum Gate Emitter Voltage VGEO	±20 V
onsemi NGTB20N120IHWG IGBT, 40 A 1200 V, 3-Pin TO-247, Through HoleBrand	ON Semiconductor

Key Features

Maximum continuous collector current of 40 amperes ensures robust power handling.
Collector-emitter voltage rating of 650 volts suitable for medium power applications.
Low collector-emitter saturation voltage of 1.7 V for efficient switching.
Maximum power dissipation rated at 230 W for reliable thermal performance.
Operating temperature range from -40°C to 175°C supports harsh environments.
Mount type is through hole, facilitating secure PCB mounting.
Designed with TrenchStop™ technology for reduced on-state losses and enhanced efficiency.
RoHS and JESD-022 compliance assures environmental and quality standards.

Product Description

The Infineon IHW40N65R5XKSA1 is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronic switching applications. It supports a maximum continuous collector current of 40 A and a collector-emitter voltage rating of 650 V. This device is packaged in a 3-Pin TO-247 form factor with through-hole mounting, making it suitable for a variety of industrial electronic modules.

Featuring Infineon's TrenchStop™ technology, this IGBT offers low saturation voltage and fast switching capabilities which help reduce switching losses, improving overall system efficiency. The device can operate within a wide temperature range from -40°C to 175°C, enhancing its reliability in demanding environments typical in industrial, automotive, and energy sectors.

The transistor includes an integrated high-speed fast recovery antiparallel diode to assist in resonant switching applications. Its maximum power dissipation rating of 230 W ensures robust performance under heavy load conditions.

Maximum continuous collector current of 40 A. Low collector-emitter saturation voltage of 1.7 V for high efficiency. Maximum collector to emitter voltage of 650 V. Maximum power dissipation 230 W. Operating temperature from -40°C to 175°C.

Through hole mounting in a 3-Pin TO-247 package. RoHS and JESD-022 compliant. TrenchStop™ technology for reduced losses. Maximum gate-emitter voltage ±20 V.

This IGBT is ideal for industrial power control, motor drives, switch mode power supplies, and energy conversion systems. Its high voltage and current ratings combined with efficient switching characteristics make it a preferred choice for high-performance power semiconductor requirements.

Explore the Electronics & Electricals > Semiconductor > IGBT category on EnvMart for compatible components and related power transistor products from Infineon and other leading manufacturers.