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STMicroelectronics N-Channel IGBT, 11 A 600 V, 3-Pin TO-220 Through Hole STGF14NC60KD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STGF14NC60KD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 11A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 28W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP, Through HoleBrand | Infineon |
Key Features
- The device offers high efficiency and fast switching performance.
- Maximum continuous collector current of 11 amperes for reliable operation.
- Maximum collector-emitter voltage rating of 600 volts ensures suitability for demanding power applications.
- Package conforms to TO-220 standard and mounting type is through hole for ease of installation.
- Gate emitter voltage maximum rating is ±20 volts to protect the device gate.
- The device exhibits low collector-emitter saturation voltage of 2.5 volts for energy-efficient switching.
- Operating temperature range from -55°C to 150°C supports harsh environmental conditions.
- Compact dimensions suitable for various industrial power electronic circuits.
Product Description
STMicroelectronics STGF14NC60KD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a maximum continuous collector current of 11 A and a collector-emitter voltage of 600 V. This 3-pin device is housed in a TO-220 through hole package, making it ideal for industrial applications requiring efficient power switching and high current capability.
The IGBT combines the simplicity of MOSFET gate drive with the high-current and low-saturation voltage capabilities of bipolar transistors, enabling fast and efficient switching. It supports a maximum gate emitter voltage of ±20 V and low saturation voltage of 2.5 V, which minimizes power losses during operation.
This device is rated for operation in temperatures ranging from -55°C to 150°C, suitable for demanding industrial and commercial environments. Its compact TO-220 packaging with three pins allows for straightforward mounting and integration in power electronics assemblies.
Typical applications for the STGF14NC60KD include switched mode power supplies, motor control, power inverters, and industrial power converters where efficient high-speed switching and reliable performance are crucial.
The device offers high efficiency and fast switching performance. Maximum continuous collector current of 11 amperes for reliable operation. Maximum collector-emitter voltage rating of 600 volts ensures suitability for demanding power applications.
Package conforms to TO-220 standard and mounting type is through hole for ease of installation. Gate emitter voltage maximum rating is ±20 volts to protect the device gate. The device exhibits low collector-emitter saturation voltage of 2.5 volts for energy-efficient switching.
Operating temperature range from -55°C to 150°C supports harsh environmental conditions. Compact dimensions suitable for various industrial power electronic circuits. Three-pin configuration simplifies integration in circuits.
Discover a wide range of semiconductor components and power devices on EnvMart for your next industrial or electronic project. Browse our STMicroelectronics category to find compatible components and technical resources.
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Frequently Asked Questions
The maximum continuous collector current for this model is 11 amperes.
This IGBT has a maximum collector-emitter voltage rating of 600 volts.
It is housed in a TO-220 package, which is a through-hole type for easy installation.
The operating temperature range for this model is from -55°C to 150°C.
The maximum gate-emitter voltage rating is ±20 volts.
It exhibits a low collector-emitter saturation voltage of 2.5 volts.
This model has a 3-pin configuration.
The dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
It is suitable for applications such as switched mode power supplies, motor control, and power inverters.
The maximum power dissipation is rated at 28 watts.
This device features an N-channel configuration.
The country of origin for this IGBT is India.
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