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Infineon N-Channel IGBT Dual Transistor Module 1500 A 1700 V 10-Pin PRIME3 Surface Mount FF1500R17IP5BPSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 38.25mm
Length 247mm
Model FF1500R17IP5BPSA1
Width 86mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type PRIME3
Minimum Operating Temperature -40°C
Pin Count 10
Maximum Continuous Collector Current Ic 1500A
Maximum Collector Emitter Voltage Vceo 1700V
Maximum Collector Emitter Saturation Voltage VceSAT 2.9V
Channel Type N
Maximum Power Dissipation Pd 1500kW
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 2

Key Features

  • Maximum continuous collector current rated at 1500 A for demanding power loads.
  • Collector-emitter voltage rating of 1700 V suitable for industrial motor controls and power converters.
  • Features dual transistors (2) in a 10-pin N-channel configuration.
  • High maximum power dissipation up to 1500 kW offering excellent thermal handling.
  • Constructed with TRENCHSTOP IGBT5 technology for low switching losses and high efficiency.
  • Operating temperature range from -40°C to 175°C ensures reliable performance under harsh conditions.
  • Maximum gate-emitter voltage of 20 V and collector-emitter saturation voltage of 2.9 V.
  • Ideal for use in motor control, wind turbine inverters, power transmission, and traction applications.

Product Description

Infineon FF1500R17IP5BPSA1 is a high-performance N-Channel IGBT module featuring TRENCHSTOP IGBT5 and .XT interconnection technology, designed for robust power conversion and motor control applications. It supports a maximum continuous collector current of 1500 A and withstands collector-emitter voltages up to 1700 V, making it suitable for demanding industrial environments.

The device is packaged in a PRIME3 surface mount with 10 pins, housing two transistors in an N-channel configuration. With a maximum power dissipation of 1500 kW, it provides reliable thermal cycling capability and high power density. Physical dimensions include a length of 247 mm, width of 86 mm, and height of 38.25 mm.

Its operating temperature range from -40°C to 175°C allows it to maintain performance under extreme conditions. Key electrical parameters include a maximum gate-emitter voltage of 20 V and a collector-emitter saturation voltage of 2.9 V, ensuring efficient switching and conduction losses.

This IGBT module is well suited for use cases such as industrial motor control and drives, power converters and inverters for wind turbines, power transmission systems, and traction motors. It benefits industrial, manufacturing, HVAC, and renewable energy sectors.

Maximum continuous collector current: 1500 A. Collector-emitter voltage rating: 1700 V. Package type: PRIME3, surface mount. Number of transistors: 2 (dual transistor module). Pin count: 10 pins in N-channel configuration.

Operating temperature: -40°C to 175°C. Maximum power dissipation: 1500 kW. Collector-emitter saturation voltage: 2.9 V.

Designed for engineers and system integrators focused on high power semiconductor solutions, the FF1500R17IP5BPSA1 ensures reliability and efficiency in power electronic applications. EnvMart categories offer extensive browsing options for IGBTs and discrete semiconductor components.

Infineon N-Channel IGBT Dual Transistor Module 1500 A 1700 V 10-Pin PRIME3 Surface Mount FF1500R17IP5BPSA1
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Frequently Asked Questions

The maximum continuous collector current is rated at 1500 A, suitable for demanding power loads.

It can handle a maximum power dissipation of up to 1500 kW, offering excellent thermal handling.

The module is packaged in a PRIME3 surface mount configuration with 10 pins.

The maximum gate-emitter voltage is 20 V.

The collector-emitter saturation voltage is rated at 2.9 V.

The dimensions are 247 mm in length, 86 mm in width, and 38.25 mm in height.

It is constructed with TRENCHSTOP IGBT5 technology, which provides low switching losses and high efficiency.

The country of origin for this model is India.

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