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Toshiba N-Channel Insulated Gate Bipolar Transistor 30A 600V 3-Pin TO-3P Through Hole GT30J121
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Model | GT30J121 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.45V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 170W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- The device supports a maximum continuous collector current of 30 amperes.
- It operates with a maximum collector emitter voltage of 600 volts.
- The transistor has a maximum power dissipation of 170 watts for efficient thermal handling.
- Features a TO-3P package type and is mounted through hole for secure installation.
- With a 3-pin configuration, it enables simple and reliable electrical connections.
- Maximum gate emitter voltage is ±20 volts, allowing for robust switching controls.
- Maximum collector emitter saturation voltage is 2.45 volts ensuring low conduction losses.
- Operating temperature ranges from -55°C to 150°C for versatile industrial environments.
Product Description
Toshiba GT30J121 is a N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications, combining the gate-drive simplicity of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors. It supports a maximum continuous collector current of 30A and withstands voltages up to 600V, ideally suited for efficient power switching in various industrial and electronic systems.
Packaged in a TO-3P form factor and through-hole mount type, GT30J121 facilitates robust mounting and heat dissipation. The device has three terminals and a maximum power dissipation of 170W, suitable for high thermal loads encountered in power electronic circuits.
The transistor’s maximum gate emitter voltage is ±20V, with a collector emitter saturation voltage of 2.45V, maximizing switching performance and minimizing conduction losses. It is capable of operating across a wide temperature range from -55°C to 150°C, making it reliable in harsh environments encountered in manufacturing, motor drives, renewable energy inverters, and HVAC equipment.
The product complies with the RoHS standard, ensuring it meets environmental and safety requirements. It is not designed for automotive standard use but is highly suitable for industrial power control and electronic component integration.
The device supports a maximum continuous collector current of 30 amperes. Maximum collector emitter voltage rating of 600 volts. Power dissipation capacity of 170 watts. TO-3P package used with a through-hole mount type.
N-channel type for high efficiency switching. Pin count of 3 for connection simplicity. A maximum gate emitter voltage of ±20 volts is supported. Collector emitter saturation voltage maximum of 2.45 volts reduces losses.
Operating temperature range from -55°C to 150°C. Complies with RoHS regulations ensuring safety and environmental compliance.
This Toshiba IGBT is widely applicable in industrial electronics, including power supplies, motor controls, manufacturing systems, and high-performance switching applications that require robustness and fast switching capabilities. Explore related semiconductor devices and industrial-grade components at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this model is 30 amperes.
This transistor has a maximum collector emitter voltage rating of 600 volts.
The maximum power dissipation capacity is 170 watts, suitable for high thermal loads.
It is packaged in a TO-3P form factor, designed for through-hole mounting.
The maximum gate emitter voltage supported by the GT30J121 is ±20 volts.
The maximum collector emitter saturation voltage is 2.45 volts, which helps reduce conduction losses.
This model operates within a temperature range of -55°C to 150°C.
The transistor features a 3-pin configuration for simple and reliable electrical connections.
Yes, it complies with RoHS standards, ensuring it meets environmental and safety requirements.
This IGBT is suitable for industrial power control, motor drives, and electronic component integration.
It is an N-Channel Insulated Gate Bipolar Transistor (IGBT), combining MOSFET gate-drive simplicity with high-current capabilities.
The country of origin for this model is India.
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