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Infineon N-Channel IGBT Transistor, 12 A, 600 V, TO-220 Package, Through Hole Mount IKP06N60TXKSA1

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Infineon N-Channel IGBT Transistor, 12 A, 600 V, TO-220 Package, Through Hole Mount IKP06N60TXKSA1

Name: Infineon N-Channel IGBT Transistor, 12 A, 600 V, TO-220 Package, Through Hole Mount IKP06N60TXKSA1
Brand: Infineon
SKU: 138853
Price: 1.03 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IKP06N60TXKSA1
Mount Type	Through Hole
Series	TrenchStop
Energy Rating	0.335mJ
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-40°C
Standards/Approvals	JEDEC, RoHS
Pin Count	3
Maximum Continuous Collector Current Ic	12A
Maximum Collector Emitter Voltage Vceo	600V
Maximum Collector Emitter Saturation Voltage VceSAT	2.05V
Channel Type	N
Maximum Power Dissipation Pd	88W
Maximum Gate Emitter Voltage VGEO	20 V

Key Features

Maximum continuous collector current of 12 A ensures robust performance under load.
High collector-emitter voltage rating of 600 V supports demanding voltage requirements.
TO-220 package with through hole mount for easy integration into electronic circuits.
Features TrenchStop technology providing very low saturation voltage and reduced turn-off losses.
Operates within a wide temperature range from -40°C to 175°C for industrial reliability.
Equipped with a low electromagnetic interference (EMI) profile for clean switching.
Maximum power dissipation of 88 W supports efficient thermal management.
Includes a built-in, fast recovery anti-parallel diode enhancing switching performance.

Product Description

Infineon IKP06N60TXKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed to combine the simple gate drive of MOSFETs with the high-current and low saturation voltage capabilities of bipolar transistors. This device is ideal for power electronics applications requiring efficiency and fast switching.

Encapsulated in a TO-220 package and designed for through hole mounting, this IGBT supports a maximum continuous collector current of 12 A and a collector-emitter voltage of 600 V, suitable for industrial, HVAC, motor control, and power supply circuits.

Featuring Infineon's TrenchStop technology, this transistor exhibits very low collector-emitter saturation voltage (2.05 V max), minimizing conduction losses and enhancing efficiency in switching applications. It also provides low turn-off losses and short tail current, which help improve system performance and reduce EMI.

The device operates over a temperature range from -40°C to 175°C, ensuring reliable operation in demanding environments. It carries compliance to JEDEC and RoHS standards, reflecting adherence to industry quality and environmental regulations.

Maximum continuous collector current: 12 A. Maximum collector-emitter voltage: 600 V. Maximum power dissipation: 88 W. Package Type: TO-220, Through Hole mount. Pin count: 3. Maximum gate-emitter voltage: 20 V. Operating temperature: -40°C to 175°C.

Energy rating: 0.335 mJ. Series: TrenchStop. Includes fast recovery anti-parallel diode.

This IGBT transistor is suitable for applications in industrial equipment, power electronics, automotive electronics (non-automotive grade), manufacturing processes, and energy management systems.

Explore more high-quality Infineon semiconductor products for your electronic circuit needs at EnvMart.