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STMicroelectronics N-Channel IGBT 80 A 600 V Power Transistor 3-Pin TO-247 Through Hole STGW39NC60VD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 14.8mm |
| Model | STGW39NC60VD |
| Width | 15.75mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC JESD97 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 250W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Designed for high efficiency and fast switching applications.
- Maximum continuous collector current of 80 amperes.
- Collector-emitter voltage rating of 600 volts.
- Maximum power dissipation rating of 250 watts.
- Compact TO-247 package with through-hole mounting.
- High gate-emitter voltage tolerance of ±20 volts.
- Collector-emitter saturation voltage of 2.4 volts maximum.
- Wide operating temperature range from -55°C to 150°C.
Product Description
STMicroelectronics STGW39NC60VD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial and electronic power control applications. It features a continuous collector current capacity of 80 amperes and a maximum collector-emitter voltage of 600 volts, making it suitable for demanding power switching tasks.
The device is housed in a robust 3-pin TO-247 through-hole package, optimized for easy integration and effective heat dissipation. Its gate-emitter voltage tolerance of ±20 V provides stable control and reliability in various circuit designs.
With a maximum power dissipation of 250 watts and excellent switching speed performance, this IGBT enables efficient power conversion and management in applications like motor drives, inverters, and power supplies.
This transistor operates reliably within a wide temperature range from -55°C to 150°C, ensuring durable performance in diverse industrial environments. Compliance with JEDEC JESD97 standards guarantees consistent quality and manufacturing rigor.
Designed for high efficiency and fast switching applications. Maximum continuous collector current of 80 amperes. Collector-emitter voltage rating of 600 volts. Maximum power dissipation rating of 250 watts. Compact TO-247 package with through-hole mounting.
High gate-emitter voltage tolerance of ±20 volts. Collector-emitter saturation voltage of 2.4 volts maximum. Wide operating temperature range from -55°C to 150°C. Complies with JEDEC JESD97 standard. 3-pin configuration suitable for multiple industrial power control circuits.
This IGBT is widely used in industrial electronics, power distribution, manufacturing equipment, HVAC systems, and other applications requiring robust, high current switching elements. It represents a reliable choice for engineers and designers focused on efficient and long-lasting power semiconductor solutions.
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Frequently Asked Questions
The maximum continuous collector current for this model is 80 amperes.
The collector-emitter voltage rating is 600 volts.
The maximum power dissipation rating is 250 watts.
It has a gate-emitter voltage tolerance of ±20 volts.
The maximum collector-emitter saturation voltage is 2.4 volts.
This model operates within a wide temperature range from -55°C to 150°C.
It features a through-hole mounting type.
The package type is TO-247.
This model has a 3-pin configuration.
It complies with JEDEC JESD97 standards.
The height of this IGBT is 20.15 mm.
The dimensions are 14.8 mm in length, 15.75 mm in width, and 20.15 mm in height.
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