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onsemi Insulated Gate Bipolar Transistor IGBT 650 V, 3-Pin TO-247-4LD Surface Mount FGHL75T65LQDTL4
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL75T65LQDTL4 |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL75T65LQDTL4 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-4LD |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 469W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum collector emitter voltage of 650 V ensures robust power handling.
- Maximum power dissipation of 469 W supports high thermal capacity.
- Compliant with RoHS standards for environmental safety.
- Operating temperature range from -55°C to 175°C suitable for harsh environments.
- Compact package dimensions with length 15.87 mm, width 20.82 mm, and height 4.82 mm.
- Low conduction losses enable efficient power conversion.
- Designed for optimum performance balancing Vce(sat) and Eoff losses.
- Optimized for applications including solar inverters, UPS systems, EV charging stations, and energy storage systems.
Product Description
onsemi FGHL75T65LQDTL4 IGBT is a high-performance Insulated Gate Bipolar Transistor rated for 650 V collector emitter voltage and supplied in a 3-Pin TO-247-4LD surface mount package. It is engineered to deliver optimum performance by balancing on-state voltage drop (Vce(sat)) and turn-off energy loss (Eoff), offering well-controllable turnoff voltage overshoot, thus increasing device reliability and efficiency.
This IGBT supports a maximum power dissipation of 469 W, making it suitable for demanding applications requiring robust thermal management. It operates reliably across a wide temperature range from -55°C up to 175°C, allowing deployment in environments with significant temperature variations.
Its compact dimensions (15.87 mm length, 20.82 mm width, and 4.82 mm height) facilitate integration into space-constrained designs with surface mount technology. The device meets RoHS standards, assuring compliance with environmental and safety regulations.
Typical applications for the FGHL75T65LQDTL4 include solar power inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, energy storage systems (ESS), and other high-performance power conversion equipment.
Maximum collector emitter voltage: 650 V. Maximum power dissipation: 469 W. Package type: TO-247-4LD. Pin count: 3 pins. Operating temperature range: -55°C to 175°C. Surface mount type package. RoHS compliant. Series: FGHL75T65LQDTL4.
This product supports positive temperature coefficient characteristic enabling easy parallel operation with low conduction losses. It is designed and manufactured to meet demanding industrial and commercial requirements for power semiconductor applications. Explore EnvMart's semiconductor category for a wider selection of compatible components.
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Frequently Asked Questions
The maximum collector emitter voltage of the FGHL75T65LQDTL4 IGBT is 650 V.
This model supports a maximum power dissipation of 469 W, making it suitable for demanding applications.
It operates reliably across a temperature range from -55°C to 175°C.
The package dimensions are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
The FGHL75T65LQDTL4 IGBT has 3 pins.
Yes, it is compliant with RoHS standards for environmental safety.
This model supports surface mount technology.
It is optimized for applications including solar inverters, UPS systems, EV charging stations, and energy storage systems.
The maximum gate emitter voltage (VGEO) for this IGBT is 20 V.
It supports a positive temperature coefficient characteristic, which enables easy parallel operation with low conduction losses.
The country of origin for this IGBT is India.
Balancing Vce(sat) and Eoff losses enhances device reliability and efficiency, making it suitable for high-performance power conversion applications.
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