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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STGB10NC60KDT4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STGx10NC60KD |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 20A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 65W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
STMicroelectronics STGB10NC60KDT4 is a N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching applications. Rated for a continuous collector current of 20 amperes and collector-emitter voltage of 600 volts, this semiconductor device features a 3-pin TO-263 surface mount package suitable for compact electronic assemblies.
The IGBT integrates the advantages of MOSFETs and bipolar transistors, delivering simple gate drive and low saturation voltage, making it suitable for industrial electronics, power supplies, and switching circuits. Its maximum power dissipation of 65 watts and operational temperature range from -55°C to 150°C ensure reliable performance under demanding conditions.
Its low collector-emitter saturation voltage of 2.5 volts enhances switching efficiency, reducing power losses. The device supports a gate-emitter voltage of ±20 volts, providing robust gate control. Compact package dimensions ensure space-saving on printed circuit boards.
Compliant with RoHS standards, the STGB10NC60KDT4 supports environmentally responsible designs. It is ideally applied in power management, motor drives, inverters, and industrial automation systems, contributing to improved energy efficiency and robust operation.
This device features a 3-pin TO-263 surface mount package. Maximum collector current of 20 A supports medium power applications. 600 V maximum collector-emitter voltage withstands high voltage operations. Power dissipation of 65 W allows for sustained operation without overheating.
Wide temperature range from -55°C to 150°C ensures durability. Low VceSAT of 2.5 V minimizes conduction losses. ±20 V gate-emitter voltage enables effective gate control. Compact physical dimensions optimize PCB space usage.
RoHS compliance supports green manufacturing protocols. Explore the full range of semiconductor components at EnvMart to find optimized solutions for your industrial and electronic engineering needs.
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