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Infineon N-Channel IGBT 50 A 1200 V TO-247 Through Hole Transistor IKW25N120T2FKSA1

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Infineon N-Channel IGBT 50 A 1200 V TO-247 Through Hole Transistor IKW25N120T2FKSA1

Name: Infineon N-Channel IGBT 50 A 1200 V TO-247 Through Hole Transistor IKW25N120T2FKSA1
Brand: Infineon
SKU: 135907
Price: 6.36 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IKW25N120T2FKSA1
Mount Type	Through Hole
Series	TrenchStop
Energy Rating	4.3mJ
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Standards/Approvals	RoHS, JEDEC1, Pb-free lead plating
Pin Count	3
Maximum Continuous Collector Current Ic	50A
Maximum Collector Emitter Voltage Vceo	1200V
Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
Channel Type	N
Maximum Power Dissipation Pd	349W
Maximum Gate Emitter Voltage VGEO	20 V

Key Features

Supports a maximum continuous collector current of 50 A for heavy-duty operation.
Designed with a maximum collector-emitter voltage rating of 1200 V for high voltage endurance.
Utilizes a TO-247 package with a through-hole mounting style for easy integration into power circuits.
Features TrenchStop technology enabling low saturation voltage and reduced switching losses.
Operates reliably over a temperature range from -40°C up to 175°C for robust thermal performance.
Includes a maximum gate-emitter voltage of ±20 V to protect gate insulation.
Low collector-emitter saturation voltage of 2.2 V reduces conduction losses.
Complies with RoHS and JEDEC1 standards and features Pb-free lead plating.

Product Description

Infineon IKW25N120T2FKSA1 is a N-Channel IGBT transistor rated for a maximum continuous collector current of 50 A and a collector-emitter voltage of 1200 V. This device comes in a 3-pin TO-247 through-hole package, designed to withstand demanding power switching environments. It leverages Infineon's TrenchStop technology to achieve very low saturation voltage and low turn-off losses, enhancing efficiency in power electronics.

Key features include a wide operating temperature range from -40°C to 175°C, making it suitable for high-reliability industrial applications. The maximum gate-emitter voltage of ±20 V ensures protection of the gate oxide layer during switching operations. Additionally, the device complies with RoHS and JEDEC1 standards and uses Pb-free lead plating for environmental compliance.

Infineon TrenchStop IGBTs are optimized for applications such as motor drives, power inverters, and other power management systems that require fast recovery diodes and low electromagnetic interference. The transistor's design also provides short tail current characteristics and low electromagnetic interference, making it highly suitable for modern power semiconductor requirements.

Supports maximum continuous collector current of 50 A. Maximum collector-emitter voltage: 1200 V. Maximum power dissipation: 349 W. Package type: TO-247 with through-hole mount. Low collector-emitter saturation voltage of 2.2 V.

Operating temperature range from -40°C to 175°C. Compliance with RoHS, JEDEC1, and Pb-free lead plating standards. Utilizes TrenchStop technology for improved efficiency. Energy rating of 4.3 mJ ensuring robust switching performance.

This IGBT transistor is engineered to meet the rigors of industrial, laboratory, construction, HVAC, manufacturing, and automotive electronic applications. Its robust electrical ratings and packaging make it a versatile component for power electronic circuits requiring efficient and reliable switching.

Explore more high-quality Infineon power semiconductor devices and IGBTs on EnvMart.