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STMicroelectronics N-Channel IGBT 60 A 650 V 4-Pin TO-247 Through Hole STGWA30IH65DF

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STMicroelectronics N-Channel IGBT 60 A 650 V 4-Pin TO-247 Through Hole STGWA30IH65DF

Name: STMicroelectronics N-Channel IGBT 60 A 650 V 4-Pin TO-247 Through Hole STGWA30IH65DF
Brand: STMicroelectronics
SKU: 165845
Price: 6.95 USD
Availability: InStock

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Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	5.1mm
Length	15.9mm
Model	STGWA30IH65DF
Width	21.1mm
Mount Type	Through Hole
Series	STG
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Continuous Collector Current Ic	60A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	2.05V
Channel Type	N
Maximum Power Dissipation Pd	108W
Maximum Gate Emitter Voltage VGEO	20 V

Key Features

Maximum continuous collector current of 60 A ensures efficient load handling.
Maximum collector-emitter voltage rated at 650 V for high voltage switching.
Power dissipation capacity of 108 W suitable for demanding environments.
4-pin TO-247 through hole package facilitates easy PCB mounting and heat dissipation.
Maximum switching speed of 1 MHz for high-frequency operation.
Advanced trench gate field-stop structure improves conduction efficiency.
Maximum junction temperature rating up to 175 °C for thermal reliability.
Wide operating temperature range from -55 °C to 175 °C for versatile applications.

Product Description

STMicroelectronics STGWA30IH65DF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) providing 60 A maximum continuous collector current and 650 V maximum collector-emitter voltage. Equipped with a 4-pin TO-247 through hole package, this device is designed for reliable and efficient power switching in industrial, electronic, and power electronics applications.

The device features an advanced trench gate field-stop structure optimized for enhanced conduction performance and reduced switching losses. With a maximum power dissipation of 108 W and a maximum junction temperature of 175 °C, it is suitable for high-performance and demanding environments. Designed for soft commutation only, this IGBT exhibits a tight parameter distribution, minimized tail current, and low thermal resistance for efficient operation.

Its wide operating temperature range from -55 °C to 175 °C makes it adaptable for various ambient conditions encountered in industrial and commercial applications. The device also includes a low collector-emitter saturation voltage of 2.05 V at 60 A, reducing power dissipation during conduction. Additionally, the device complies with RoHS standards ensuring environmental safety and sustainability.

Supports operating frequencies up to 1 MHz. Includes a positive temperature coefficient for stable operation. Built-in low drop voltage freewheeling co-packaged diode for improved efficiency. 4-pin through hole package facilitates easy installation and heat management.

Ideal for use in power supplies, inverters, motor drives, and industrial power control systems.

This STG series IGBT by STMicroelectronics is perfect for industrial, automotive electronics, and power management systems requiring robust and high-performance switching devices. STMicroelectronics offers dedicated design resources including PCB and 3D mechanical models for integration ease.

Explore related semiconductor products and power switching devices in our Electronics & Electricals category at EnvMart for your industrial and commercial project needs.