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| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Length | 19.81mm |
| Model | IXGH40N120B2D1 |
| Width | 15.75mm |
| Mount Type | Through Hole |
| Series | Mid-Frequency |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 380W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| IXYS IXEH40N120D1 IGBT, 60 A 1200 V, 3-Pin TO-247AD, Through HoleBrand | IXYS |
| IGBT,BUP314 52A 1200V TO218Brand | Infineon |
IXYS IXGH40N120B2D1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching in power electronics applications. It supports a maximum continuous collector current of 75 A and a collector-emitter voltage rating of 1200 V, making it suitable for industrial, automotive, and power control systems.
The device comes in a robust TO-247 package with 3 pins for through-hole mounting, allowing easy integration into various circuit designs. With a power dissipation capability of 380 W and switching speed of 140 ns, it delivers reliable performance in demanding electrical and semiconductor environments.
This IGBT operates effectively in a wide temperature range from -55°C to 150°C, ensuring durability and stability across harsh operating conditions. It supports a gate-emitter voltage of ±20 V and exhibits a typical collector-emitter saturation voltage of 3.5 V, contributing to reduced power losses and higher efficiency.
The component measures 19.81 mm in length and 15.75 mm in width, fitting standard footprints for power semiconductor devices. The IXYS IXGH40N120B2D1 is RoHS compliant, affirming its environmental safety and suitability for use in modern electronics manufacturing.
This IGBT uses a TO-247 package with 3 pins and is designed for through-hole mounting. It features a maximum power dissipation of 380 W and a fast switching speed of 140 ns. The device operates reliably between -55°C and 150°C temperatures.
Maximum gate emitter voltage is ±20 V, while the collector emitter saturation voltage is 3.5 V. The device dimensions include length 19.81 mm and width 15.75 mm. Compliant with RoHS standards and suitable for mid-frequency applications.
This N-Channel IGBT is ideal for use in industrial automation, power inverters, motor drives, and HVAC systems. Its characteristics also suit laboratory power electronics and manufacturing process controls.
Explore our extensive semiconductor and electronic components catalog for compatible parts and devices to support your projects and industrial needs at EnvMart.
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