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STMicroelectronics N-Channel IGBT 650 V, 3-Pin TO-3P Through Hole STGWT80H65DFB
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STGWT80H65DFB |
| Mount Type | Through Hole |
| Series | HB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 469W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through HoleBrand | onsemi |
Key Features
- High maximum collector emitter voltage of 650 V supports robust power control.
- Maximum power dissipation rating of 469 W ensures reliability under heavy loads.
- Package type is TO-3P with through-hole mount for durable installation.
- Maximum operating temperature up to 175°C enables high-temperature performance.
- Fast switching frequency up to 1 MHz suits high-speed industrial electronics.
- Maximum gate emitter voltage of ±20 V offers flexible gate drive conditions.
- Collector emitter saturation voltage limited to 2 V reduces conduction losses.
- Designed with RoHS compliance for environmental safety and sustainability.
Product Description
STMicroelectronics STGWT80H65DFB is an N-Channel Insulated Gate Bipolar Transistor (IGBT) housed in a 3-pin TO-3P through-hole package, engineered for high-efficiency power semiconductor applications. With a maximum collector emitter voltage rating of 650 volts and power dissipation capability of 469 watts, it is well suited for demanding industrial, automotive, and power electronics environments where reliable and fast switching is critical.
The device features a maximum operating temperature of 175°C, allowing operation in harsh thermal conditions. Its switching speed reaches up to 1 MHz, ideal for modern power control circuits requiring rapid switching response.
The maximum gate emitter voltage of ±20 V enables versatile control input ranges, and its collector emitter saturation voltage of 2 volts minimizes power losses during conduction, enhancing overall circuit efficiency.
Designed with a through-hole mount and TO-3P package, the STGWT80H65DFB ensures robust physical stability and easy integration into power modules or industrial PCBs. Its operational temperature range from -55°C to 175°C supports reliable performance under varying environmental conditions. The device conforms to RoHS standards, contributing to environmentally friendly manufacturing practices.
High collector emitter voltage for industrial power applications. Robust power dissipation for heavy-duty use. Through-hole TO-3P packaging provides durable mounting. High switching speed suitable for advanced power circuits.
Wide operating temperature range supports harsh environments. Low saturation voltage optimizes efficiency. Compliant with RoHS environmental standards.
This STMicroelectronics product is ideal for use in industrial, manufacturing, power conversion, and automotive applications that demand reliable, high-performance power semiconductor devices. It supports circuit designs requiring rapid switching and high-voltage capacity in discrete semiconductor form.
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Frequently Asked Questions
The maximum collector emitter voltage for the STMicroelectronics STGWT80H65DFB is 650 volts, making it suitable for high-voltage applications.
This IGBT has a maximum power dissipation rating of 469 watts, ensuring reliability under heavy loads.
The maximum operating temperature for this model is 175°C, allowing it to function in high-temperature environments.
The STGWT80H65DFB is housed in a TO-3P package, which is designed for through-hole mounting.
This model can achieve a fast switching frequency of up to 1 MHz, making it suitable for high-speed industrial electronics.
The collector emitter saturation voltage is limited to 2 volts, which helps reduce conduction losses.
The STMicroelectronics STGWT80H65DFB has a pin count of 3, suitable for various circuit designs.
The minimum operating temperature for this IGBT is -55°C, allowing it to operate in low-temperature conditions.
The maximum gate emitter voltage for this model is ±20 V, providing flexibility in gate drive conditions.
Yes, this IGBT is designed with RoHS compliance, contributing to environmental safety and sustainability.
The STMicroelectronics STGWT80H65DFB is ideal for industrial, automotive, and power electronics applications requiring reliable and fast switching.
This model features an N-channel configuration, which is commonly used in various power semiconductor applications.
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