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Infineon N-Channel IGBT 90 A 650 V 3-Pin TO-247 Through Hole IKW75N65EH5XKSA1

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Infineon N-Channel IGBT 90 A 650 V 3-Pin TO-247 Through Hole IKW75N65EH5XKSA1

Name: Infineon N-Channel IGBT 90 A 650 V 3-Pin TO-247 Through Hole IKW75N65EH5XKSA1
Brand: Infineon
SKU: 169709
Price: 4.86 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Length	41.42mm
Model	IKW75N65EH5XKSA1
Width	16.13mm
Mount Type	Through Hole
Series	High Speed Fifth Generation
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Standards/Approvals	JEDEC
Pin Count	3
Maximum Continuous Collector Current Ic	90A
Maximum Collector Emitter Voltage Vceo	650V
Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
Channel Type	N
Maximum Power Dissipation Pd	395W
Maximum Gate Emitter Voltage VGEO	±30 V

Key Features

Supports high-voltage inverter and motor drive designs.
Maximum power dissipation of 395 W enables sustained thermal performance.
Operating temperature range from -40°C to 175°C suits harsh environments.
Maximum gate emitter voltage tolerance of ±30 V for flexible drive voltages.
Low collector emitter saturation voltage of 1.65 V minimizes conduction losses.
Compliant with JEDEC standards for reliable performance.
Package designed for efficient thermal transfer with external heatsink capability.
Ideal for industrial, motor-drive, inverter, and power supply applications.

Product Description

Infineon IKW75N65EH5XKSA1 is a High Speed Fifth Generation N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for heavy-duty power switching applications. It features a maximum continuous collector current of 90 A and a maximum collector emitter voltage of 650 V, housed in a robust 3-pin TO-247 through-hole package.

This component supports high-voltage inverter designs and is suitable for industrial motor drive power stages, three-phase inverter outputs, and power supplies requiring reliable high-current switching. Its ±30 V maximum gate emitter voltage allows flexible drive voltages, and a low collector emitter saturation voltage of 1.65 V ensures reduced conduction losses during operation.

With a maximum power dissipation of 395 W and an operating temperature range from -40°C to 175°C, the IKW75N65EH5XKSA1 is well suited for elevated temperature environments. The TO-247 package facilitates efficient thermal management by providing a large metal backing for heatsink attachment and secure through-hole mounting for mechanical stability.

Supports high-voltage inverter and motor drive designs. Maximum power dissipation of 395 W for sustained thermal performance. Operating temperature range from -40°C to 175°C suits harsh environments. ±30 V gate emitter voltage tolerance for flexible drive voltages.

Low collector emitter saturation voltage minimizes conduction losses. Compliant with JEDEC standards for electrical consistency. Package design allows for efficient heat dissipation via heatsinks. Ideal for industrial, laboratory, manufacturing, and power electronics applications.

Provides reliable performance for motor drives and power supplies.

The Infineon IKW75N65EH5XKSA1 is recommended for industrial electronics where fast switching and robust voltage handling are critical. Its design supports applications such as three-phase inverters, traction drives, and heavy-duty industrial motor control. It is ideal for through-hole PCB mounting and prototyping where reliable thermal management and electrical performance are essential.

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