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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC026N08NS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | +150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon BSC026N08NS5ATMA1 N-Channel MOSFET is a power switching device optimized for high-current, low-loss surface mount applications. It supports a maximum continuous drain current of 381 A and has a maximum drain source voltage of 40 V. Presented in a compact SuperSO8 5 x 6 mm package with 8 pins, it is ideal for circuits requiring rapid switching and durable thermal performance.
The MOSFET provides an exceptionally low maximum drain source resistance of 0.7 mΩ which minimizes conduction losses under heavy load conditions. With a power dissipation rating of 81 W, it allows for sustained thermal loading suitable for demanding power applications.
Its typical gate charge of 80 nC enables efficient switching control, contributing to reduced switching losses. The device operates over a wide temperature range from -55°C to +150°C, making it versatile for various ambient conditions encountered in industrial environments.
The maximum gate source voltage of 20 V is compatible with standard driver levels, while a forward voltage of 1.1 V ensures efficient conduction. The device complies with RoHS environmental restrictions, emphasizing environmental safety, though it is not certified for automotive standard applications.
Common applications include high-current DC-DC converters in power racks, server and telecom power distribution modules, motor drivers requiring fast switching, battery management systems for high-power packs, and synchronous rectification in high-efficiency power supplies.
This MOSFET features a SuperSO8 5 x 6 mm surface mount package with 8 pins. Supports a maximum continuous drain current of 381 A and 40 V drain source voltage. Low maximum drain source resistance of 0.7 mΩ to reduce conduction losses.
81 W maximum power dissipation supports sustained thermal loading. Efficient switching with a typical gate charge of 80 nC. Wide operating temperature range from -55°C to +150°C. Compliance with RoHS environmental standards.
Not suitable for automotive standard applications. Explore more Infineon semiconductor products and MOSFETs on EnvMart for advanced electronic component solutions.
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