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Vishay ThunderFET N-Channel MOSFET 120 A 100 V Enhancement 3-Pin TO-220AB SUP70040E-GE3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 15.49mm |
| Length | 10.51mm |
| Model | SUP70040E-GE3 |
| Width | 4.65mm |
| Mount Type | Through Hole |
| Series | ThunderFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.004Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Employs enhancement mode channel for efficient switching.
- Contains 3 pins in a TO-220AB through-hole package.
- Features low drain-source resistance of 0.004 Ohm for reduced power loss.
- Supports a maximum gate-source voltage of -20 V to +20 V.
- Maximum power dissipation capacity is 375 W, suitable for high-power applications.
- Operating temperature range spans from -55°C to 175°C.
- Typical gate charge of 76 nC at gate-source voltage, ensuring efficient control.
- Manufactured in Taiwan, Province Of China.
Product Description
Vishay SUP70040E-GE3 is a ThunderFET N-Channel MOSFET designed for high-power switching applications. With a maximum continuous drain current of 120 A and a drain-source voltage of 100 V, this device is suited for demanding electronic circuits where efficiency and reliability are critical.
The MOSFET operates in enhancement mode and is housed in a TO-220AB package featuring 3 pins suitable for through-hole mounting, facilitating easy integration into electronic boards.
This component offers a low on-resistance of 0.004 Ohm, which minimizes power dissipation and heat generation. The device’s maximum power dissipation rating is 375 W, allowing it to handle substantial loads.
The gate-source voltage tolerates extremes from -20 V to +20 V, providing robust control characteristics, and the typical gate charge of 76 nC at Vgs supports efficient switching speeds. The MOSFET performs reliably across a wide temperature range from -55°C to 175°C.
Its compact physical dimensions make it suitable for space-constrained applications, measuring 10.51 mm long, 4.65 mm wide, and 15.49 mm high. Manufactured to high-quality standards in Taiwan, Province Of China, this MOSFET is ideal for industrial, power management, and electronic control applications.
Employs enhancement mode channel for efficient switching. Contains 3 pins in a TO-220AB through-hole package. Features low drain-source resistance of 0.004 Ohm for reduced power loss. Supports a maximum gate-source voltage of -20 V to +20 V.
Maximum power dissipation capacity is 375 W, suitable for high-power applications. Operating temperature range spans from -55°C to 175°C. Typical gate charge of 76 nC at gate-source voltage, ensuring efficient control. Compact dimensions: length 10.51 mm, width 4.65 mm, height 15.49 mm.
Manufactured in Taiwan, Province Of China. Ideal for industrial power electronics and control circuits. Explore more products in the MOSFET category at EnvMart to meet your semiconductor needs.
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Frequently Asked Questions
The Vishay SUP70040E-GE3 has a maximum continuous drain current of 120 A.
This model supports a maximum drain-source voltage of 100 V.
It has a maximum power dissipation capacity of 375 W, making it suitable for high-power applications.
The operating temperature range spans from -55°C to 175°C.
The Vishay SUP70040E-GE3 is housed in a TO-220AB package, which features 3 pins for through-hole mounting.
This model features a low drain-source resistance of 0.004 Ohm, which helps reduce power loss.
The typical gate charge is 76 nC at the specified gate-source voltage.
It supports a maximum gate-source voltage of -20 V to +20 V.
The dimensions are 10.51 mm in length, 4.65 mm in width, and 15.49 mm in height.
It employs an enhancement mode N-channel for efficient switching.
This component is manufactured in Taiwan, Province Of China.
This MOSFET is ideal for industrial, power management, and electronic control applications.
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