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Infineon BSC N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Maximum Drain Source Voltage, 81 W BSC066N06NSATMA1

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Infineon BSC N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Maximum Drain Source Voltage, 81 W BSC066N06NSATMA1

Name: Infineon BSC N-Channel MOSFET, 381 A Continuous Drain Current, 40 V Maximum Drain Source Voltage, 81 W BSC066N06NSATMA1
Brand: Infineon
SKU: 178264
Price: 0.71 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	BSC066N06NSATMA1
Mount Type	Surface
Series	BSC
Maximum Operating Temperature	+150°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	381A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.7mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET supports a maximum continuous drain current of 381 A.
It features a maximum drain-source voltage rating of 40 V suitable for mid-voltage applications.
The device dissipates up to 81 W of power, allowing effective thermal management.
The typical gate charge is 80 nC, enabling efficient and fast switching.
The low drain-source resistance of 0.7 mΩ reduces conduction losses under heavy loads.
It operates over a wide temperature range from -55 °C to +150 °C.
The SuperSO8 5 x 6 surface mount package facilitates automated PCB assembly.
The maximum gate-source voltage of 20 V ensures robust control and safe operation.

Product Description

Infineon BSC066N06NSATMA1 is a high-performance N-Channel MOSFET designed for power management applications requiring substantial continuous current and thermal efficiency. Operating at a maximum drain-source voltage of 40 V and supporting 381 A continuous drain current, it is ideal for demanding electronic circuits.

Housed in a compact SuperSO8 5 x 6 surface mount package, this device provides low conduction losses with its 0.7 mΩ maximum drain-source resistance. It features an efficient gate charge of 80 nC at typical gate voltages, enabling fast and controlled switching, beneficial for high-frequency power conversion designs.

The MOSFET is engineered to dissipate up to 81 W, capable of sustaining significant thermal loads in industrial and commercial electronics. Its wide operating temperature range from -55 °C to +150 °C supports reliability under harsh environmental conditions.

Designed primarily for use in DC-DC converters, motor-drive stages, synchronous rectification, and battery management systems, it suits power racks and high-temperature power modules where efficiency and compactness are key.

This MOSFET supports a maximum continuous drain current of 381 A. Maximum drain-source voltage rating is 40 V. Maximum power dissipation reaches 81 W. The device features low Rds(on) of 0.7 mΩ to minimize losses. It has a typical gate charge of 80 nC for efficient switching.

Operating temperature range is from -55 °C to +150 °C. SuperSO8 5 x 6 package type supports surface mounting. The maximum gate-source voltage is 20 V. Complies with RoHS environmental standards.

Infineon MOSFETs like the BSC066N06NSATMA1 are suitable for use in industrial electronics, laboratory equipment, HVAC systems, manufacturing automation, and automotive electronics where non-automotive specific compliance is acceptable.

For detailed design integration, consult the technical datasheets and application notes provided by Infineon. Explore more MOSFET options and related electronic components on EnvMart.