Infineon Triple Parallel 6-Transistor IGBT Module 650 V 20 mW Power Dissipation AG-EASY3B F3L400R07W3S5B59BPSA1

Infineon F3L400R07W3S5B59BPSA1 triple parallel IGBT module is a high-performance semiconductor device designed to deliver reliable switching and power handling in demanding electronic systems. It supports a maximum collector emitter voltage of 650 V and a maximum power dissipation of 20 mW, suitable for efficient operation in industrial power modules and renewable energy systems.

The module contains 6 transistors configured in a triple parallel arrangement, leveraging the AG-EASY3B package to ensure thermal stability and mechanical robustness. It features a maximum gate emitter voltage rating of ±20 V and wide operational temperature capability from -40°C up to 150°C, allowing usage in harsh environmental conditions.

This IGBT module integrates advanced TRENCHSTOP™ 5 technology for optimal switching performance while reducing losses. The incorporation of NTC (Negative Temperature Coefficient) sensors and PressFIT contact technology enhances monitoring and simplifies the integration process in power conversion applications.

Specifically designed for PV solar inverter systems operating up to 1000 V DC with high efficiency (up to 99%), this module supports output powers exceeding 100 kVA. Its compact physical dimensions (length 109.9 mm, height 16.4 mm) facilitate integration into various electronic assemblies requiring space-efficient, high-power semiconductor devices.

Applications extend across industrial drives, renewable energy inverters, and other high-power electronic domains where robust IGBT performance is critical. The Infineon F3L400R07W3S5B59BPSA1 module is engineered for durability and efficient thermal management, ensuring long-term reliability in commercial and industrial environments.

The module features a triple parallel configuration with 6 transistors for enhanced current handling. It uses AG-EASY3B package type ensuring reliable mechanical and thermal performance. Maximum power dissipation rating is 20 mW for stable operation.

Operating temperature range spans from -40°C to 150°C. Maximum gate emitter voltage of ±20 V protects device integrity. Compact size supports flexible design integration. Incorporates TRENCHSTOP™ 5 technology for high efficiency.

Includes NTC and PressFIT for thermal monitoring and assembly advantages. Designed for 1000 V DC photovoltaic and solar inverter applications. Suitable for industrial automation, power electronics, and renewable energy sectors.

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