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STMicroelectronics Type N-Channel IGBT 150A 1200V, Max247, Through Hole STGYA75H120DF2

Category IGBT Module Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Model STGYA75H120DF2
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type Max247
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 150A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.6V
Channel Type Type N
Maximum Power Dissipation Pd 750W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Designed for optimal performance with 150A continuous collector current.
  • Supports up to 1200V collector-emitter voltage for high-voltage operations.
  • Max247 package design allows effective through-hole mounting and thermal management.
  • Integrated advanced trench gate field stop structure reduces switching and conduction losses.
  • Three-pin configuration ensures straightforward integration into industrial circuits.
  • Enables efficient switching up to 1MHz for a variety of power electronics applications.
  • Features a positive VCE(sat) temperature coefficient for safer paralleling operation.
  • Wide operating temperature range from -55°C to 175°C.

Product Description

STMicroelectronics STGYA75H120DF2 Type N-Channel IGBT 150A 1200V Max247 is engineered for exceptional reliability and efficient switching performance in demanding electronic and power systems. As part of the H series IGBTs, this device leverages advanced proprietary trench gate field stop technology to achieve a balance between conduction and switching losses, thereby maximizing efficiency in high-frequency converter designs.

The device is capable of handling a continuous collector current of 150A and operates at a collector-emitter voltage of up to 1200V, making it suitable for high-voltage industrial and power control environments. Its Max247 package and through-hole mounting enable efficient heat dissipation and secure installation, while the three-pin configuration simplifies integration into existing circuit designs.

With a maximum power dissipation of 750W and a switching speed of 1MHz, the STGYA75H120DF2 is built to accommodate fast switching and high load applications, including motor drives, uninterruptible power supplies, and renewable energy inverters. The device's tight parameter distribution and positive saturation voltage temperature coefficient facilitate safer parallel operation, ensuring longevity and reliability even under challenging thermal conditions.

Designed for optimal performance with 150A continuous collector current. Supports up to 1200V collector-emitter voltage for high-voltage operations. Max247 package design allows effective through-hole mounting and thermal management.

Integrated advanced trench gate field stop structure reduces switching and conduction losses. Three-pin configuration ensures straightforward integration into industrial circuits. Enables efficient switching up to 1MHz for a variety of power electronics applications.

Features a positive VCE(sat) temperature coefficient for safer paralleling operation. Wide operating temperature range from -55°C to 175°C.

This IGBT is an excellent choice for demanding industrial sectors such as manufacturing automation, HVAC systems, renewable energy conversion, and electric vehicle charging infrastructure. Its performance and reliability meet strict requirements for both commercial and laboratory environments.

Explore more STMicroelectronics power semiconductor solutions in the EnvMart IGBT Module category for advanced power management and control applications.

STMicroelectronics Type N-Channel IGBT 150A 1200V, Max247, Through Hole STGYA75H120DF2
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Frequently Asked Questions

The maximum continuous collector current of the STGYA75H120DF2 is 150A.

This IGBT supports a maximum collector-emitter voltage of 1200V.

The operating temperature range for this model is from -55°C to 175°C.

The STGYA75H120DF2 utilizes a through-hole mounting type, which allows for effective installation and thermal management.

This IGBT comes in a Max247 package type.

The maximum power dissipation for this model is 750W.

The STGYA75H120DF2 features a three-pin configuration, which simplifies integration into circuit designs.

The maximum gate-emitter voltage for the STGYA75H120DF2 is 20V.

This model features a Type N channel.

The maximum collector-emitter saturation voltage (VceSAT) for the STGYA75H120DF2 is 2.6V.

This IGBT is suitable for applications in manufacturing automation, HVAC systems, renewable energy conversion, and electric vehicle charging infrastructure.

This model incorporates advanced trench gate field stop technology to reduce switching and conduction losses, enhancing efficiency in high-frequency applications.

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