Infineon IGBT Module 750 A 1200 V 11-Pin AG-ECONOD Surface Mount FF750R12ME7B11BPSA1

Infineon FF750R12ME7B11BPSA1 is a high-performance IGBT Module designed for industrial power electronics requiring robust switching and high power handling. Rated at a maximum continuous collector current of 750 A and collector emitter voltage of 1200 V, this module utilizes EconoDUAL 11-Pin AG-ECONOD packaging for surface mounting applications.

This module incorporates the TRENCHSTOP IGBT7 technology with emitter controlled 7 diode and NTC temperature sensing, along with PressFIT contact technology to enhance performance and reliability. It supports operating temperatures ranging from -40°C up to 175°C, making it suitable for demanding industrial environments.

The compact physical dimensions of 152 mm length, 62.5 mm width, and 20.5 mm height enable high power density while maintaining an isolated base plate design for electrical safety. The standard complies with rigorous standards such as 60068 environmental testing, 60749 electrical properties, and IEC 60747 semiconductor standards ensuring durability and reliability in diverse applications.

This IGBT module's maximum collector emitter saturation voltage of 1.75 V helps reduce conduction losses, and the maximum gate emitter voltage is rated at 20 V, providing effective gate protection. It is adaptable to both press-in and soldering assembly processes, facilitating flexible manufacturing methods.

Infineon FF750R12ME7B11BPSA1 is ideal for industrial, manufacturing, and power conversion systems requiring efficient and reliable high-power switching components. This IGBT module features a dual TRENCHSTOP IGBT7 design for efficient switching.

Equipped with emitter controlled 7 diode, NTC, and PressFIT contact technology. Suitable for surface mounting using the AG-ECONOD package with 11 pins. Supports high operating temperatures up to 175°C with a minimum of -40°C.

Compact dimensions of 152 mm length, 62.5 mm width, and 20.5 mm height. Designed for high power density and isolated base plate configuration. Complies with standards including 60068, 60749, and IEC 60747 ensuring reliability.

Provides a maximum continuous collector current of 750 A. Maximum collector emitter saturation voltage is 1.75 V, helping reduce conduction losses. Maximum gate emitter voltage rating of 20 V safeguards gate circuitry. Package supports both press-in and soldering processes for flexible assembly.

Explore the complete range of Infineon Semiconductor components and IGBT Modules on EnvMart for advanced electronic and industrial applications.