Infineon N-Channel IGBT Module 20 A 1200 V 23-Pin EASY1B Clamp FP10R12W1T4B11BOMA1

Infineon FP10R12W1T4B11BOMA1 N-Channel IGBT Module offers a robust solution for power semiconductor applications requiring efficient switching and high current handling. Rated for 20 A maximum continuous collector current and 1200 V collector emitter voltage, this module is enclosed in an EASY1B package with 23 pins and a clamp mounting type for secure fitting.

It features advanced trenchstop and fieldstop IGBT technology, supporting switching frequencies up to 60 kHz with low switching losses. The device operates reliably across a broad temperature range from -40°C to 150°C, making it suitable for demanding industrial, commercial, and vehicular environments.

With a maximum power dissipation of 105 W, this module balances thermal performance and compact size, measuring 12 mm in height, 48 mm in length, and 33.8 mm in width. Its maximum gate emitter voltage is 20 V, and saturation voltage is 2.25 V, ensuring precise gate control and efficient current conduction.

This IGBT module is ideal for applications such as inverters, uninterruptible power supplies (UPS), and industrial drives where efficient and reliable switching is critical. Package styles range from EasyPACK to EconoPACK variants, enabling integration flexibility.

Supports high switching frequencies with low losses. Wide operating temperature range for harsh conditions. Compact and robust clamp-mount EASY1B package. High power dissipation capacity ensures reliable operation. Advanced N-channel trenchstop and fieldstop IGBT technology.

Suitable for industrial, agricultural, construction vehicle applications. Explore the broad range of Infineon IGBT Modules and components available for various power electronics needs on EnvMart.