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Infineon Half Bridge IGBT Module 300 A 750 V AG-EASY2B PCB Mount FF300R08W2P2B11ABOMA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.4mm
Length 51mm
Model FF300R08W2P2B11ABOMA1
Mount Type PCB
Configuration Half Bridge
Maximum Operating Temperature 150°C
Package Type AG-EASY2B
Minimum Operating Temperature -40°C
Standards/Approvals RoHS, UL 94 VO module frame
Maximum Continuous Collector Current Ic 300A
Maximum Collector Emitter Voltage Vceo 750V
Maximum Collector Emitter Saturation Voltage VceSAT 1.18V
Automotive Standard AQG 324
Maximum Power Dissipation Pd 20mW
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • This module adopts the Benchmark EDT2 IGBT generation for robust performance.
  • Maximum continuous collector current of 300 A supports high power applications.
  • Rated for 750 V maximum collector emitter voltage for reliable switching.
  • Package type AG-EASY2B and PCB mount allow easy system integration.
  • Operation temperature range from -40°C to 150°C ensures durability under harsh environments.
  • Maximum gate emitter voltage is ±20 V for stable control.
  • Low saturation voltage of 1.18 V reduces power loss during conduction.
  • Fully qualified for automotive standards AQG 324 and includes RoHS, UL 94 VO compliant module frame.

Product Description

Infineon FF300R08W2P2B11ABOMA1 Half Bridge IGBT Module is a high-performance electronic component designed for power control applications demanding high current and voltage capabilities. The module integrates the EDT2 generation IGBT technology delivering a blocking voltage of 750 V and continuous collector current of 300 A, ideal for demanding inverter circuits in electric and hybrid vehicles.

This compact module measures 51 mm in length and 16.4 mm in height, providing an easy-to-integrate solution with PCB mounting and an AG-EASY2B package type. Its operating temperature range from -40°C to 150°C enables durable operation even under harsh environmental conditions.

The module features a maximum gate emitter voltage of ±20 V for precise control and a low collector emitter saturation voltage of 1.18 V, contributing to efficient power conversion with minimal losses. It is fully compliant with automotive industry standards including AQG 324 certification, RoHS, and UL 94 VO standard for safety and environmental conformity.

The rugged design of the FF300R08W2P2B11ABOMA1 module ensures reliable inverter operation with superior short circuit ruggedness and benchmark current density, making it highly suitable for automotive and industrial motor control, power switching, and energy management applications.

This module adopts the Benchmark EDT2 IGBT generation for robust performance. Maximum continuous collector current of 300 A supports high power applications. Rated for 750 V maximum collector emitter voltage for reliable switching.

Package type AG-EASY2B and PCB mount allow easy system integration. Operation temperature range from -40°C to 150°C ensures durability under harsh environments. Maximum gate emitter voltage is ±20 V for stable control. Low saturation voltage of 1.18 V reduces power loss during conduction.

Fully qualified for automotive standards AQG 324 and includes RoHS, UL 94 VO compliant module frame. Compact size measuring 51 mm length and 16.4 mm height optimizes space utilization. Designed for hybrid and electric vehicle main inverter applications requiring reliability and ruggedness.

This Infineon IGBT module is ideal for industrial power electronics, automotive electrification, manufacturing motor drives, and renewable energy inverters. Explore more IGBT Modules and related semiconductor components at EnvMart for varied application needs.

Infineon Half Bridge IGBT Module 300 A 750 V AG-EASY2B PCB Mount FF300R08W2P2B11ABOMA1
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