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Vishay P-Channel Power MOSFET 11 A, 60 V TO-220AB IRF9Z24PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRF9Z24PBF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS 2002/95/EC |
| Number of Elements per Chip | 1 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.28Ω |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- Capable of maximum continuous drain current of 11 amperes.
- Features low drain-source resistance at 0.28 ohms for efficient conduction.
- Supports maximum power dissipation of 60 watts ensuring durability.
- Wide operating temperature range from -55°C up to 175°C.
- Has a maximum gate-source voltage of 20 volts for robust operation.
- Typical gate charge of 19 nanocoulombs at gate-source voltage.
- Single transistor configuration optimized for power applications.
- Complies with RoHS 2002/95/EC environmental standards.
Product Description
Vishay IRF9Z24PBF P-Channel Power MOSFET is designed for efficient switching and power control with a maximum continuous drain current of 11 A and a drain-source voltage rating of 60 V. Packaged in a TO-220AB case, it provides excellent thermal management and reliability in demanding industrial environments.
This MOSFET features a low typical drain-source resistance of 0.28 Ω at a gate-source voltage of 10 V, enabling high efficiency and reduced power loss. It exhibits a typical gate charge of 19 nC which supports fast switching capabilities, making it ideal for power converters and motor control circuits.
Engineered to operate in extreme conditions, the device supports an operating temperature range from -55°C to 175°C. The maximum gate-source voltage of ±20 V ensures protection against voltage spikes. It is manufactured with advanced trenchFET technology improving its switching performance while maintaining long product life.
Key features include dynamic dV/dt rating, ease of paralleling for higher current applications, fast switching times, and lead (Pb)-free environmental compliance. Its repetitive avalanche rating and simple drive requirements make it suitable for various industrial and commercial electronics.
Typical applications for the IRF9Z24PBF MOSFET include battery chargers, inverter circuits, power supplies, and switching mode power supplies (SMPS). Its robust electrical and thermal characteristics make it a reliable choice for industrial power control, automotive electronics (non-automotive grade), and energy management systems.
Capable of maximum continuous drain current of 11 amperes. Features low drain-source resistance at 0.28 ohms for efficient conduction. Supports maximum power dissipation of 60 watts ensuring durability. Wide operating temperature range from -55°C up to 175°C.
Has a maximum gate-source voltage of 20 volts for robust operation. Typical gate charge of 19 nanocoulombs at gate-source voltage. Single transistor configuration optimized for power applications. Complies with RoHS 2002/95/EC environmental standards.
Designed for applications including battery chargers, inverters, power supplies, and SMPS. Manufactured in China ensuring quality and reliability. Explore the wide range of semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial application needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
The maximum drain-source voltage rating is 60 V.
It features a typical drain-source resistance of 0.28 Ω at a gate-source voltage of 10 V.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage is ±20 V.
The typical gate charge is 19 nC at the specified gate-source voltage.
This model is packaged in a TO-220AB case.
Typical applications include battery chargers, inverter circuits, power supplies, and switching mode power supplies (SMPS).
It complies with RoHS 2002/95/EC environmental standards.
There is 1 element per chip in this MOSFET.
It utilizes a single transistor configuration optimized for power applications.
This model is manufactured in China.
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