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| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Model | IKW50N65ES5XKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 1.78mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 274W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon IKW50N65ES5XKSA1 Type N-Channel IGBT is engineered for robust and efficient performance in demanding power electronics systems. This device, belonging to Infineon's TrenchStop series, combines the reliable gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capabilities of bipolar transistors, making it ideal for industrial, electronic, and commercial segments.
With a maximum continuous collector current of 80A and collector-emitter voltage up to 650V, this IGBT is suited for applications requiring exceptional switching speeds and reliability. The TO-247 package supports through hole mounting, providing secure installation and excellent thermal management in high-power circuits.
Its integrated high-speed, fast recovery anti-parallel diode enhances efficiency and minimizes losses during operation, while the low collector-emitter saturation voltage (1.7V) reduces power dissipation. The device employs TrenchStop technology for improved switching behavior and lower electromagnetic interference (EMI).
Rated for 80A maximum continuous collector current. Handles up to 650V collector-emitter voltage. TO-247 package suitable for through hole mounting. Low collector-emitter saturation voltage of 1.7V. Features integrated high speed, fast recovery anti-parallel diode.
Operates efficiently at temperatures from -40°C to 175°C. Utilizes TrenchStop technology for minimized turn-off losses. Suitable for industrial and power semiconductor applications.
The IKW50N65ES5XKSA1 offers a wide temperature range from -40°C to 175°C and a maximum power dissipation of 274W, enabling reliable operation in various harsh environments. Typical industrial use cases include high-power drives, induction heating, renewable energy converters, and smart power modules.
This product is ideal for manufacturers and engineers seeking high efficiency, fast switching, and durability in their electronic designs. Explore more Infineon IGBT Modules and power semiconductors in the EnvMart catalog for your industrial and commercial project needs.
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