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Infineon Type N-Channel IGBT 80A 650V 3-Pin TO-247 Through Hole IKW50N65ES5XKSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Model IKW50N65ES5XKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 1.78mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Pin Count 3
Maximum Continuous Collector Current Ic 80A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V
Channel Type Type N
Maximum Power Dissipation Pd 274W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Rated for 80A maximum continuous collector current.
  • Handles up to 650V collector-emitter voltage.
  • TO-247 package suitable for through hole mounting.
  • Low collector-emitter saturation voltage of 1.7V.
  • Features integrated high speed, fast recovery anti-parallel diode.
  • Operates efficiently at temperatures from -40°C to 175°C.
  • Utilizes TrenchStop technology for minimized turn-off losses.
  • Suitable for industrial and power semiconductor applications.

Product Description

Infineon IKW50N65ES5XKSA1 Type N-Channel IGBT is engineered for robust and efficient performance in demanding power electronics systems. This device, belonging to Infineon's TrenchStop series, combines the reliable gate-drive characteristics of a MOSFET with the high-current and low-saturation-voltage capabilities of bipolar transistors, making it ideal for industrial, electronic, and commercial segments.

With a maximum continuous collector current of 80A and collector-emitter voltage up to 650V, this IGBT is suited for applications requiring exceptional switching speeds and reliability. The TO-247 package supports through hole mounting, providing secure installation and excellent thermal management in high-power circuits.

Its integrated high-speed, fast recovery anti-parallel diode enhances efficiency and minimizes losses during operation, while the low collector-emitter saturation voltage (1.7V) reduces power dissipation. The device employs TrenchStop technology for improved switching behavior and lower electromagnetic interference (EMI).

Rated for 80A maximum continuous collector current. Handles up to 650V collector-emitter voltage. TO-247 package suitable for through hole mounting. Low collector-emitter saturation voltage of 1.7V. Features integrated high speed, fast recovery anti-parallel diode.

Operates efficiently at temperatures from -40°C to 175°C. Utilizes TrenchStop technology for minimized turn-off losses. Suitable for industrial and power semiconductor applications.

The IKW50N65ES5XKSA1 offers a wide temperature range from -40°C to 175°C and a maximum power dissipation of 274W, enabling reliable operation in various harsh environments. Typical industrial use cases include high-power drives, induction heating, renewable energy converters, and smart power modules.

This product is ideal for manufacturers and engineers seeking high efficiency, fast switching, and durability in their electronic designs. Explore more Infineon IGBT Modules and power semiconductors in the EnvMart catalog for your industrial and commercial project needs.

Infineon Type N-Channel IGBT 80A 650V 3-Pin TO-247 Through Hole IKW50N65ES5XKSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 80A.

This model can handle up to 650V of collector-emitter voltage.

It is designed for through hole mounting, utilizing a TO-247 package type.

The collector-emitter saturation voltage is low at 1.7V.

It operates efficiently within a temperature range of -40°C to 175°C.

It utilizes TrenchStop technology, which minimizes turn-off losses and enhances switching behavior.

The maximum power dissipation is rated at 274W.

The energy rating for this device is 1.78mJ.

This model has a pin count of 3.

The maximum gate-emitter voltage is rated at 20V.

It is suitable for industrial and power semiconductor applications, including high-power drives and renewable energy converters.

The country of origin for this IGBT is China.

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