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Infineon Type N-Channel IGBT Module 150 A 1.2 kV 32-Pin Through Hole FS150R12N2T7BPSA1

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Infineon Type N-Channel IGBT Module 150 A 1.2 kV 32-Pin Through Hole FS150R12N2T7BPSA1

Name: Infineon Type N-Channel IGBT Module 150 A 1.2 kV 32-Pin Through Hole FS150R12N2T7BPSA1
Brand: Infineon
SKU: 112242
Price: 20.22 USD
Availability: InStock

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Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	20.5mm
Length	107.5mm
Model	FS150R12N2T7BPSA1
Width	45mm
Mount Type	Through Hole
Series	FS150R12N2T7
Maximum Operating Temperature	175°C
Package Type	Module
Minimum Operating Temperature	-40°C
Pin Count	32
Maximum Continuous Collector Current Ic	150A
Maximum Collector Emitter Voltage Vceo	1.2kV
Maximum Collector Emitter Saturation Voltage VceSAT	1.8V
Channel Type	Type N
Maximum Power Dissipation Pd	20mW
Maximum Gate Emitter Voltage VGEO	20 V
Number of Transistors	6

Key Features

This module includes six transistors designed for high power dissipation of 20 mW.
Supports a maximum gate emitter voltage of 20 V and saturation voltage of 1.8 V.
Operates reliably in temperatures from -40°C to 175°C, enabling industrial use.
The module measures 107.5 mm in length, 45 mm in width, and 20.5 mm in height.
Suitable for motor drives, servo drives, and auxiliary inverter applications.
Constructed with a copper base plate for high power and thermal cycling endurance.
Uses Trenchstop IGBT7 technology with emitter controlled diode for optimized performance.
Available with PressFIT mounting technology as a variation.

Product Description

Infineon FS150R12N2T7BPSA1 Type N-Channel IGBT Module is a robust power semiconductor device rated for 150 A continuous collector current and 1.2 kV collector-emitter voltage. Its 32-pin through hole module design incorporates six transistors utilizing Trenchstop IGBT7 technology with an emitter controlled diode and integrated NTC thermal sensor.

This module supports a maximum gate emitter voltage of 20 V and a collector emitter saturation voltage of 1.8 V, ensuring efficient switching performance. Engineered to withstand operating temperatures ranging from -40°C up to 175°C, it features a durable copper base plate capable of high power and thermal cycling endurance.

The physical dimensions of the module are 107.5 mm in length, 45 mm in width, and 20.5 mm in height. It is designed primarily for demanding industrial applications, including motor drives, auxiliary inverters, and servo drives, offering reliable performance under overload conditions up to 175°C.

The EconoPACK 2 six-pack IGBT module integrates superior thermal management and electrical characteristics suited for high power switching. Variants with PressFIT mounting technology are also available to facilitate assembly efficiency.

This IGBT module contains six transistors optimized for power electronics applications. Maximum continuous collector current rating of 150 A ensures high load capability. Rated for a maximum collector-emitter voltage of 1.2 kV across the module.

Designed with a 32-pin module package type for through hole mounting. Operational temperature range supports industrial and automotive environments from -40°C to 175°C. Robust construction with copper base plate improves heat dissipation and reliability.

Incorporates Trenchstop IGBT7 and emitter controlled diodes for enhanced switching performance.

This product is ideal for industrial power electronics, manufacturing automation, HVAC motor controls, and energy management systems. It complements applications requiring efficient power conversion and thermal resilience.

Explore the full range of Infineon IGBT Modules and semiconductor components on EnvMart for advanced electronic manufacturing solutions.