Infineon Type N-Channel IGBT Module 275A 1200V AG-62MM-1 Clamp FF200R12KS4HOSA1

The Infineon FF200R12KS4HOSA1 is a type N-channel IGBT module built for demanding industrial and commercial power applications. This insulated gate bipolar transistor module is engineered to deliver high efficiency and fast switching capabilities, making it suitable for use in inverters, UPS systems, and industrial drives.

With a maximum continuous collector current of 275A and a collector emitter voltage rated at 1200V, this module can manage significant power throughput. The AG-62MM-1 package design, featuring clamp mount technology, ensures robust mechanical installation and reliable thermal performance.

The module achieves maximum power dissipation up to 1400W, enabling it to support high-frequency switching operations up to 60 kHz. Its channel type is optimized for low switching loss, and the gate emitter voltage rating of 20V offers precise control, which is critical for advanced switching systems.

The FF200R12KS4HOSA1 module is constructed to operate within a broad temperature range, from -40°C to +125°C, allowing for use in harsh environments. Other technical aspects include a collector emitter saturation voltage of 3.85V, overall module dimensions of 106.4mm length, 61.4mm width, and 30.5mm height, and compliance with UL (E83335) standards.

This module is ideal for integration into applications requiring reliable power control, such as industrial automation, renewable energy systems, motor drives, and commercial power electronics. The combination of Infineon's advanced IGBT technologies, including Trenchstop and Fieldstop features, results in an efficient, durable module for both hard and soft switching environments.

Environmental adaptability, rigorous power ratings, and secure mounting make this IGBT module a go-to choice for engineers designing robust energy conversion systems. For more IGBT Modules and supply solutions, browse the EnvMart Electronics & Electricals category or Infineon product ranges.