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Infineon CoolMOS N-Channel MOSFET & Diode, 145 A, 700 V Enhancement Mode, 3-Pin TO-263 Package IPB65R065C7ATMA2
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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB65R065C7ATMA2 |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-263 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 145A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
Infineon IPB65R065C7ATMA2 CoolMOS N-Channel MOSFET & Diode is a state-of-the-art semiconductor device designed for high power and high efficiency electronic circuits. Featuring a maximum continuous drain current of 145 A and a robust 700 V drain-source voltage, this MOSFET operates in the enhancement mode and is housed in a compact 3-pin TO-263 surface-mount package suitable for space-constrained applications.
The CoolMOS C7 series represents a revolutionary advancement in MOSFET technology, providing the world's lowest RDS(on) per package. This reduction in resistance translates directly to lower conduction losses and improved overall efficiency, making it ideal for power conversion and switching power supply applications.
Thanks to its low switching losses and reduced gate charge, the device helps in minimizing energy wasted during switching operations. Its advanced design reduces output capacitance and stored energy (Eoss), improving switching speed and thermal performance.
This MOSFET is ideal for industrial, laboratory, manufacturing, and commercial HVAC applications where efficient power management and compact design are critical. Its surface-mount TO-263 package allows for high density on PCBs, facilitating compact and lightweight assemblies.
Infineon's CoolMOS technology facilitates space savings by enabling smaller package sizes or reducing the number of components required in a design. With a pin count of 3, it integrates seamlessly into circuits demanding reliable power switching.
This product offers high continuous drain current capability of 145 A for demanding high power applications. The device withstands up to 700 V drain-source voltage, making it suitable for high voltage circuits. It features low drain-source resistance of 65 milliohms lowering conduction losses.
The enhancement mode MOSFET design provides efficient switching characteristics. Compact TO-263 package ensures ease of surface mounting on PCBs. This device comes from the advanced CoolMOS C7 series, noted for superior efficiency.
Designed without automotive-specific approvals, it suits general industrial applications. RoHS compliant ensuring environmental safety standards adherence.
Choose Infineon CoolMOS IPB65R065C7ATMA2 for reliable, high efficiency power switching solutions in demanding industrial and commercial electronic systems. Explore more models and categories by browsing our extensive semiconductor catalog at EnvMart.
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Infineon CoolMOS N-Channel MOSFET & Diode, 145 A, 700 V Enhancement Mode, 3-Pin TO-263 Package IPB65R065C7ATMA2
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