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ROHM P-Channel MOSFET 200 mA 20 V Enhancement Mode 3-Pin SOT-723 RZM002P02T2L

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ROHM P-Channel MOSFET 200 mA 20 V Enhancement Mode 3-Pin SOT-723 RZM002P02T2L

Name: ROHM P-Channel MOSFET 200 mA 20 V Enhancement Mode 3-Pin SOT-723 RZM002P02T2L
Brand: ROHM
SKU: 196104
Price: 0.14 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	450μm
Length	1.3mm
Model	RZM002P02T2L
Width	900μm
Mount Type	Surface
Series	RZM002P02
Maximum Operating Temperature	150°C
Package Type	SOT-723
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	9.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	-10, +10V
Forward Voltage Vf	-1.2V

Key Features

Maximum continuous drain current of 200 mA ensures efficient current handling.
Maximum drain-source voltage of 20 V suits low voltage applications.
Enhancement mode operation offers stable switching characteristics.
Package type SOT-723 enables compact surface mounting.
Maximum drain-source resistance of 9.6 ohms optimizes conductivity.
Maximum power dissipation rated at 150 mW prevents thermal overload.
Operating temperature range from -55°C to 150°C supports varied environments.
Typical gate charge of 1.4 nC allows fast switching performance.

Product Description

ROHM RZM002P02T2L is a P-Channel MOSFET transistor optimized for low power and surface mount applications. It features a maximum continuous drain current of 200 mA and a maximum drain-source voltage of 20 V, making it suitable for precise electronics projects and embedded systems.

The device operates in enhancement mode, providing excellent switching capabilities with a maximum gate-source voltage rating of -10 V to +10 V. Its SOT-723 package ensures a compact footprint suitable for high-density PCB layouts.

With a maximum drain-source resistance of 9.6 ohms and forward voltage of -1.2 V, this MOSFET offers low conduction losses and effective power management. The device withstands a maximum power dissipation of 150 mW and functions reliably in temperature ranges from -55°C to 150°C, suitable for industrial, commercial, and laboratory use.

The typical gate charge of 1.4 nC at rated gate voltage supports efficient switching speeds, enhancing performance in digital circuits and signal modulation. This MOSFET includes three pins and is designed for quick surface mounting, aiding assembly in automated production environments.

Maximum continuous drain current: 200 mA. Maximum drain-source voltage: 20 V. Enhancement mode channel operation. SOT-723 surface mount package. Low drain-source resistance for quality conduction. Up to 150 mW power dissipation.

Wide temperature operating range (-55°C to 150°C). Typical gate charge of 1.4 nC for fast switching. Compact 3-pin design.

This product is ideal for electronic component assemblies in manufacturing, automotive electronics, instrumentation, and power management subsystems. Explore more ROHM semiconductor components and similar MOSFETs in EnvMart's catalog for tailored industrial solutions.

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Frequently Asked Questions

The maximum continuous drain current for this model is 200 mA.

It can handle a maximum drain-source voltage of 20 V.

This model features a P-Channel type channel.

The package type is SOT-723, which is suitable for surface mounting.

The maximum power dissipation rated for this MOSFET is 150 mW.

The operating temperature range is from -55°C to 150°C.

The maximum drain-source resistance is 9.6 ohms.

The typical gate charge at rated gate voltage is 1.4 nC.

The forward voltage is rated at -1.2 V.

This model has a total of 3 pins.

The maximum gate-source voltage rating is -10 V to +10 V.

This MOSFET is suitable for low power and surface mount applications, including electronic component assemblies in manufacturing and automotive electronics.