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DiodesZetex Dual DMP 2 Type P-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DI5060 DMPH6050SPD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.05mm |
| Length | 4.95mm |
| Model | DMPH6050SPD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 175°C |
| Package Type | DI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 0.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -0.7V |
| Transistor Configuration | Dual |
Key Features
- This MOSFET features dual P-Channel transistors configured for surface mount applications.
- It provides a maximum continuous drain current of 26 amperes.
- The device operates with a maximum drain-source voltage of 60 volts.
- The low drain-source resistance of 60 milliohms improves efficiency.
- Maximum power dissipation is rated at 1.5 watts, allowing safe thermal operation.
- It has a typical gate charge of 0.5 nanocoulombs at the gate-source voltage.
- The transistor supports an operating temperature range from -55°C up to 175°C.
- Pin count is 8, with surface mount package type DI5060 for compact circuit designs.
Product Description
DiodesZetex DMPH6050SPD-13 is a dual DMP 2 type P-Channel MOSFET designed for electronic applications requiring reliable high current switching. This device supports a maximum continuous drain current of 26 amperes and can handle drain-source voltages up to 60 volts. Its enhancement mode operation in an 8-pin DI5060 surface mount package makes it suitable for compact and efficient circuit designs.
The MOSFET features a low maximum drain-source resistance of 60 milliohms, ensuring efficient power handling and reduced heat generation. It dissipates up to 1.5 watts safely within a broad operating temperature range from -55°C to 175°C, making it robust for industrial and automotive environments.
Typical gate charge of 0.5 nanocoulombs at the specified gate-source voltage allows for fast switching performance and low gate drive power. The dual transistor configuration integrates two elements per chip, meeting the AEC-Q101 automotive standard for enhanced reliability and durability under harsh conditions.
This MOSFET is ideal for use in power management, automotive electronics, industrial automation, and other semiconductor applications requiring high current and voltage handling in a compact footprint.
This MOSFET features dual P-Channel transistors configured for surface mount applications. It provides a maximum continuous drain current of 26 amperes. The device operates with a maximum drain-source voltage of 60 volts.
The low drain-source resistance of 60 milliohms improves efficiency. Maximum power dissipation is rated at 1.5 watts, allowing safe thermal operation. It has a typical gate charge of 0.5 nanocoulombs at the gate-source voltage.
The transistor supports an operating temperature range from -55°C up to 175°C. Pin count is 8, with surface mount package type DI5060 for compact circuit designs. This MOSFET meets automotive standard AEC-Q101 for high reliability.
Enhancement mode channel operation and dual element chip configuration provide versatility. For semiconductor solutions including MOSFETs, browse EnvMart’s comprehensive catalog to find quality components from trusted brands such as DiodesZetex.
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Frequently Asked Questions
The maximum continuous drain current for this model is 26 amperes.
It can handle a maximum drain-source voltage of 60 volts.
This MOSFET comes in a DI5060 package type and has a pin count of 8.
The typical gate charge at the specified gate-source voltage is 0.5 nanocoulombs.
The maximum power dissipation is rated at 1.5 watts.
It supports an operating temperature range from -55°C to 175°C.
The maximum drain-source resistance is 60 milliohms.
This model meets the AEC-Q101 automotive standard for enhanced reliability.
It features a P-Channel type configuration.
The forward voltage for this MOSFET is -0.7 volts.
There are 2 elements per chip in this model.
This MOSFET is designed for surface mount applications.
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