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Infineon Bipolar Transistor, NPN, 80 mA, 12 V, 4-Pin SOT-143 BFP193E6327HTSA1

Category Bipolar Transistor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BFP193E6327HTSA1
Mount Type Surface
Series BFP193
Maximum Operating Temperature 150°C
Package Type SOT-143
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101
Pin Count 4
Maximum Collector Emitter Voltage Vceo 12V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 2V
Maximum Collector Base Voltage VCBO 20V
Maximum Power Dissipation Pd 580mW
Maximum DC Collector Current Idc 80mA
Maximum Transition Frequency ft 8GHz

Key Features

  • This transistor features a maximum power dissipation of 580 mW.
  • It operates within a temperature range of -55°C to 150°C.
  • The minimum DC current gain (hFE) is 70 for reliable amplification.
  • Designed for surface mounting with a compact SOT-143 package type.
  • Suitable for RF applications including cellular phones, DECT, tuners, and RF modems.
  • Complies with AEC-Q101 automotive standard specifications, ensuring robustness.
  • Features a maximum transition frequency of 8 GHz for high-frequency operation.
  • Has a 4-pin configuration for enhanced connectivity in circuits.

Product Description

The Infineon BFP193E6327HTSA1 Bipolar Transistor is a robust and low noise broadband NPN transistor designed for high-frequency RF applications. It supports a maximum DC collector current of 80 mA and can withstand a collector-emitter voltage of 12 V, making it suitable for various electronic applications including cellular phones, cordless phones, DECT systems, tuners, FM, and RF modems.

This transistor comes in a surface mount SOT-143 package featuring 4 pins, facilitating easy circuit integration while maintaining a compact form factor. It has a maximum power dissipation rating of 580 mW and can operate reliably in harsh environments with temperatures ranging from -55°C up to 150°C.

The BFP193E6327HTSA1 demonstrates a minimum DC current gain (hFE) of 70 and a maximum transition frequency of 8 GHz, which allows efficient amplification and signal processing at high frequencies. It also supports a maximum collector base voltage of 20 V and a maximum emitter base voltage of 2 V.

This transistor meets the AEC-Q101 automotive quality standard, verifying its durability and reliability for automotive and industrial use. The device is lead-free, aligning with current environmental compliance requirements.

This transistor features a maximum power dissipation of 580 mW. It operates within a temperature range of -55°C to 150°C. The minimum DC current gain (hFE) is 70 for reliable amplification. Designed for surface mounting with a compact SOT-143 package type.

Suitable for RF applications including cellular phones, DECT, tuners, and RF modems. Complies with AEC-Q101 automotive standard specifications, ensuring robustness. Features a maximum transition frequency of 8 GHz for high-frequency operation.

Has a 4-pin configuration for enhanced connectivity in circuits.

This Infineon bipolar transistor is ideal for industrial and communication electronics requiring stable, high-frequency performance. Its compact package and operational robustness facilitate applications in RF modules, telecommunication devices, and automotive electronics.

Explore additional high-quality semiconductors and components within EnvMart’s Electronics & Electricals > Semiconductor > Bipolar Transistor category to find complementary devices.

Infineon Bipolar Transistor, NPN, 80 mA, 12 V, 4-Pin SOT-143 BFP193E6327HTSA1
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Frequently Asked Questions

The maximum power dissipation of the Infineon BFP193E6327HTSA1 transistor is 580 mW.

It operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 70, which allows for reliable amplification.

The maximum collector-emitter voltage (Vceo) is 12 V.

The maximum transition frequency is 8 GHz, suitable for high-frequency operation.

It comes in a surface mount SOT-143 package type with 4 pins.

This model complies with the AEC-Q101 automotive standard specifications.

The maximum DC collector current is 80 mA.

It is suitable for RF applications including cellular phones, DECT systems, tuners, and RF modems.

The maximum emitter-base voltage (VEBO) is 2 V.

The country of origin for this transistor is India.

The maximum collector-base voltage (VCBO) is 20 V.

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