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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BFP193E6327HTSA1 |
| Mount Type | Surface |
| Series | BFP193 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-143 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 12V |
| Minimum DC Current Gain hFE | 70 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 2V |
| Maximum Collector Base Voltage VCBO | 20V |
| Maximum Power Dissipation Pd | 580mW |
| Maximum DC Collector Current Idc | 80mA |
| Maximum Transition Frequency ft | 8GHz |
The Infineon BFP193E6327HTSA1 Bipolar Transistor is a robust and low noise broadband NPN transistor designed for high-frequency RF applications. It supports a maximum DC collector current of 80 mA and can withstand a collector-emitter voltage of 12 V, making it suitable for various electronic applications including cellular phones, cordless phones, DECT systems, tuners, FM, and RF modems.
This transistor comes in a surface mount SOT-143 package featuring 4 pins, facilitating easy circuit integration while maintaining a compact form factor. It has a maximum power dissipation rating of 580 mW and can operate reliably in harsh environments with temperatures ranging from -55°C up to 150°C.
The BFP193E6327HTSA1 demonstrates a minimum DC current gain (hFE) of 70 and a maximum transition frequency of 8 GHz, which allows efficient amplification and signal processing at high frequencies. It also supports a maximum collector base voltage of 20 V and a maximum emitter base voltage of 2 V.
This transistor meets the AEC-Q101 automotive quality standard, verifying its durability and reliability for automotive and industrial use. The device is lead-free, aligning with current environmental compliance requirements.
This transistor features a maximum power dissipation of 580 mW. It operates within a temperature range of -55°C to 150°C. The minimum DC current gain (hFE) is 70 for reliable amplification. Designed for surface mounting with a compact SOT-143 package type.
Suitable for RF applications including cellular phones, DECT, tuners, and RF modems. Complies with AEC-Q101 automotive standard specifications, ensuring robustness. Features a maximum transition frequency of 8 GHz for high-frequency operation.
Has a 4-pin configuration for enhanced connectivity in circuits.
This Infineon bipolar transistor is ideal for industrial and communication electronics requiring stable, high-frequency performance. Its compact package and operational robustness facilitate applications in RF modules, telecommunication devices, and automotive electronics.
Explore additional high-quality semiconductors and components within EnvMart’s Electronics & Electricals > Semiconductor > Bipolar Transistor category to find complementary devices.
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