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Infineon OptiMOS 5 N-Channel MOSFET 135 A, 60 V, 8-Pin SO-8 Surface Mount ISC0702NLSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISC0702NLSATMA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 135A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Low on-resistance of 3.5 milliohms minimizes conduction losses.
- Supports continuous drain current of 135 amperes for high-power applications.
- Maximum drain-source voltage of 60 volts suitable for high-voltage power stages.
- Capable of dissipating up to 100 watts to manage thermal loads.
- Typical gate charge of 56 nanoCoulombs enables efficient switching.
- Wide gate-source voltage range up to 20 volts for broad compatibility.
- Operates reliably from -55°C to 175°C in harsh environments.
- Compact 8-pin SO-8 package designed for PCB surface mounting.
Product Description
Infineon ISC0702NLSATMA1 OptiMOS 5 Series N-Channel MOSFET is designed for high-current surface-mount applications requiring efficient switching and thermal resilience. With a maximum continuous drain current of 135 amperes and a 60-volt maximum drain-source voltage, it suits power conversion and switching roles in industrial, automotive, and consumer electronic systems.
The device features a low 3.5 milliohm on-resistance, reducing conduction losses and improving overall efficiency. It can dissipate up to 100 watts of power, allowing sustained operation under heavy thermal loads. The typical gate charge of 56 nanoCoulombs and a high gate-source voltage threshold of 20 volts facilitate fast and reliable switching.
This MOSFET operates over a wide temperature range from -55°C to 175°C, ensuring stable performance in harsh environments. The compact 8-pin SO-8 package provides a small footprint with dimensions measuring 6.1 mm in length, 5.35 mm in height, and 1.2 mm in width, ideal for circuit board space optimization.
Applications include N-channel power stages in DC-DC converters, high-current surface-mount power supplies, compact power modules, and general-purpose power switching in industrial and electronic systems. Its robust design and electrical characteristics make it a reliable choice for demanding power management tasks.
Low on-resistance of 3.5 milliohms minimizes power losses during conduction. Supports continuous drain current of 135 amperes for high-load applications. Maximum drain-source voltage of 60 volts enables use in elevated voltage environments.
Capable of dissipating 100 watts to handle thermal management effectively. Typical gate charge of 56 nanoCoulombs allows efficient switching transitions. Wide gate-source voltage from 0 up to 20 volts for versatile drive circuits.
Operates reliably in temperature ranges from -55°C to 175°C. Compact, space-saving SO-8 package with 8 pins for convenient PCB mounting. Mechanical package size ensures compatibility with automated assembly.
This product is ideal for industrial, automotive, laboratory, manufacturing, power conversion, and electronic system applications requiring reliable, efficient power switching components. Explore more Infineon semiconductor solutions and MOSFETs on EnvMart for your design needs.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 135 amperes, making it suitable for high-load applications.
The maximum drain-source voltage for this MOSFET is 60 volts, allowing its use in elevated voltage environments.
It features a low on-resistance of 3.5 milliohms, which minimizes conduction losses during operation.
The typical gate charge is 56 nanoCoulombs, enabling efficient switching transitions.
The dimensions of the SO-8 package are 6.1 mm in length, 5.35 mm in height, and 1.2 mm in width.
It operates reliably within a temperature range of -55°C to 175°C, suitable for harsh environments.
This model can dissipate up to 100 watts, effectively managing thermal loads during operation.
The maximum gate-source voltage is 20 volts, allowing for broad compatibility with various drive circuits.
It is designed for surface mounting, specifically in an 8-pin SO-8 package.
This MOSFET is suitable for applications in power conversion, high-current surface-mount power supplies, and general-purpose power switching in industrial and electronic systems.
This model is an N-channel MOSFET, which is commonly used in various power management tasks.
The country of origin for this product is India.
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