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onsemi BC849BLT1G NPN Bipolar Transistor 100 mA, 30 V DC, SOT-23, 3-Pin

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onsemi BC849BLT1G NPN Bipolar Transistor 100 mA, 30 V DC, SOT-23, 3-Pin

Name: onsemi BC849BLT1G NPN Bipolar Transistor 100 mA, 30 V DC, SOT-23, 3-Pin
Brand: onsemi
SKU: 82792
Price: 0.02 USD
Availability: InStock

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Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	3.04mm
Model	BC849BLT1G
Width	2.64mm
Mount Type	Surface
Series	BC849BLT1G
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	30V dc
Minimum DC Current Gain hFE	110
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V dc
Maximum Collector Base Voltage VCBO	30V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
Moisture Sensitivity Level	1

Key Features

Designed for linear and switching applications.
Rated for maximum collector current of 100 mA and collector-emitter voltage of 30 V DC.
SOT-23 surface-mount package with 3 pins, optimized for compact PCB layouts.
Features high transition frequency of 100 MHz and power dissipation up to 300 mW.
Suited for applications such as ESD protection, inductive load protection, and steering logic circuits.
NPN polarity with minimum DC current gain of 110.
AEC-Q101 automotive standard compliant, moisture sensitivity level 1.
Temperature range from -55°C to 150°C allows reliable operation in demanding environments.

Product Description

The onsemi BC849BLT1G is a reliable NPN bipolar transistor built for linear and switching circuits that demand robust performance and compact footprint. With a collector current capability of up to 100 mA and a maximum collector-emitter voltage of 30 V DC, this transistor is ideal for low-power surface-mount applications.

It features a SOT-23 package with three pins, making it highly suitable for densely packed circuit boards and automated assembly. The transistor boasts a high transition frequency (ft) of 100 MHz and a power dissipation rating of 300 mW, ensuring stable operation in critical signal switching functions.

Engineered with minimum DC current gain hFE of 110, the BC849BLT1G delivers excellent amplification and switching efficiency. NPN polarity, coupled with maximum emitter-base voltage of 5 V DC, helps in designing circuits with robust input tolerance.

This device is compliant with automotive AEC-Q101 standards and rated for a moisture sensitivity level of 1, enabling reliable installation in automotive and industrial settings. The wide operating temperature range of -55°C to +150°C ensures consistent performance even under harsh thermal conditions.

Typical uses span ESD protection for sensitive ICs, polarity reversal protection in analog and digital designs, data line protection in communication devices, logic signal steering, and safe handling of inductive loads in power switching.

Its small form factor and surface-mount design further support manufacturing requirements where space and automated handling are crucial. The BC849BLT1G is widely used in industrial, automotive, laboratory instrumentation, telecom, and consumer electronics sectors for its versatility and reliability.

Discover more Bipolar Transistors and surface-mount devices in EnvMart's Electronics & Electricals category for your next circuit design or manufacturing project.