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onsemi Bipolar Transistor NPN 600mA 40V SOT-223 Surface Mount Single PZT2222AT1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.2mm
Length 6.5mm
Model PZT2222AT1G
Width 3.5mm
Mount Type Surface
Series PZT2222AT1G
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz
Nexperia Transistor, 600 mA NPN, 40 V, 4-Pin SOT-223Brand Nexperia
onsemi PZT2222A NPN Transistor, 1 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • Robust NPN bipolar transistor in a 4-pin SOT-223 surface mount package.
  • Supports a maximum DC collector current of 600mA for versatile switching and amplification tasks.
  • Operates at a maximum collector-emitter voltage (Vceo) of 40V for handling moderate voltage applications.
  • High transition frequency of 300MHz enables reliable performance in high-speed circuits.
  • Wide operational temperature range from -55°C to 150°C for demanding environments.
  • Single transistor configuration suitable for discrete circuit integration.
  • RoHS compliant for safe and sustainable electronic design.
  • Automotive standard AEC-Q101 qualification ensures automotive-grade reliability.

Product Description

The onsemi PZT2222AT1G is a general-purpose NPN bipolar transistor ideal for electronic circuit designers seeking robust switching and amplification capabilities. Its SOT-223 surface mount package makes it highly suitable for modern PCB layouts, where space efficiency and thermal performance are important.

Operating at a maximum DC collector current of 600mA and a collector-emitter voltage of 40V, this transistor is adaptable to a wide range of low- to moderate-power signal applications. With a maximum collector base voltage (VCBO) of 75V and emitter base voltage (VEBO) of 6V, it offers versatility for various circuit functions requiring stable operation and isolation.

Engineered to perform reliably, the PZT2222AT1G features a minimum DC current gain (hFE) of 35, ensuring ample amplification. Its transition frequency (ft) of 300MHz supports use in high-speed signal processing, making it suitable for communications, sensor interfaces, and control electronics. The maximum power dissipation of 1.5W supports continuous operation in demanding applications, while its wide temperature range (-55°C to 150°C) provides resilience for industrial and automotive environments.

This device adheres to RoHS standards for environmental compliance and is qualified to the automotive AEC-Q101 standard, ensuring reliability where stringent quality requirements are necessary. With a single transistor configuration and easy-to-integrate surface mount design, it supports efficient installation in automated production lines.

The compact dimensions (6.5mm length, 3.5mm width, 1.2mm height) make it optimal for dense electronics assemblies. Typical use cases include signal switching, amplification in embedded systems, automotive controls, industrial automation, and general-purpose electronics.

Explore more semiconductors in the Bipolar Transistor category or view additional onsemi solutions for reliable circuit design on EnvMart.

onsemi Bipolar Transistor NPN 600mA 40V SOT-223 Surface Mount Single PZT2222AT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 600mA, making it suitable for various switching and amplification tasks.

The maximum collector-emitter voltage (Vceo) for the PZT2222AT1G is 40V, allowing it to handle moderate voltage applications.

The transition frequency of this model is 300MHz, enabling reliable performance in high-speed circuits.

The dimensions of the SOT-223 package are 6.5mm in length, 3.5mm in width, and 1.2mm in height.

This transistor operates within a wide temperature range from -55°C to 150°C, making it suitable for demanding environments.

The maximum power dissipation for the PZT2222AT1G is 1.5W, supporting continuous operation in various applications.

It utilizes a single transistor configuration, which is suitable for discrete circuit integration.

The maximum collector base voltage (VCBO) is 75V, and the maximum emitter base voltage (VEBO) is 6V.

Yes, this model is RoHS compliant, ensuring it meets environmental standards for safe electronic design.

It is qualified to the automotive standard AEC-Q101, ensuring reliability for automotive applications.

The minimum DC current gain (hFE) for the PZT2222AT1G is 35, providing ample amplification for various applications.

This transistor is suitable for applications such as signal switching, amplification in embedded systems, and automotive controls.

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