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onsemi PNP Bipolar Transistor BSP16T1G, -100 mA, -300 V, TO-223, Surface Mount

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onsemi PNP Bipolar Transistor BSP16T1G, -100 mA, -300 V, TO-223, Surface Mount

Name: onsemi PNP Bipolar Transistor BSP16T1G, -100 mA, -300 V, TO-223, Surface Mount
Brand: onsemi
SKU: 82783
Price: 0.2 USD
Availability: InStock

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Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin	Malaysia
Brand	onsemi
Height	1.65mm
Length	6.7mm
Model	BSP16T1G
Width	3.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-223
Minimum Operating Temperature	-65°C
Pin Count	4
Maximum Collector Emitter Voltage Vceo	-300V
Minimum DC Current Gain hFE	30
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	6V dc
Maximum Collector Base Voltage VCBO	350V dc
Maximum Power Dissipation Pd	1.5W
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	30MHz

Key Features

Features -100 mA maximum DC collector current for general purpose amplifier applications.
Rated for -300 V collector-emitter voltage ensures suitability for high voltage circuits.
PNP transistor housed in a surface mount TO-223 package for efficient board integration.
Maximum power dissipation of 1.5 W provides thermal reliability.
Minimum current gain of 30 allows for stable amplification performance.
Maximum transition frequency of 30 MHz is ideal for fast signal switching.
Operating temperature range from -65°C to 150°C for robust use in diverse environments.
Compact form factor with 6.7 mm length, 3.7 mm width, and 1.65 mm height.

Product Description

The onsemi BSP16T1G is a high voltage PNP bipolar transistor engineered for reliable general purpose amplifier applications in electronic and industrial circuits. With a maximum DC collector current of -100 mA and collector-emitter voltage rating of -300 V, it addresses demanding requirements in analog signal processing and switching tasks. Designed in a TO-223 surface mount package, this transistor delivers efficient board-level integration, making it suitable for compact assemblies and modern PCB layouts.

Its PNP configuration and a minimum DC current gain of 30 provide stable amplification, ensuring consistency in output signal quality. The maximum power dissipation of 1.5 W supports thermal stability, particularly in circuits with moderate heat generation. The device’s transition frequency of 30 MHz allows use in high-speed signal applications, including audio, RF, and instrumentation. Four pins offer versatile connection to various layout designs.

With operating temperatures ranging from -65°C to 150°C, the BSP16T1G is robust for deployment in environments spanning industrial, laboratory, automotive electronics (except automotive standard certification), and commercial electronics. It is especially well-suited for amplifier stages, switching devices, and voltage level translation in embedded solutions or power management systems.

Its compact size (6.7 mm length, 3.7 mm width, 1.65 mm height) enables integration into space-restricted PCB designs. The surface mount TO-223 package facilitates automated assembly processes, improving manufacturing efficiency. Notably, this product is not automotive standard approved, making it suitable for general purpose applications rather than safety-critical automotive systems.

The component’s country of origin is Malaysia. Pb-Free packaging is available.

Explore onsemi’s complete line of high performance bipolar transistors and related discrete semiconductor devices in the Bipolar Transistor and Semiconductor categories on EnvMart.