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| Country of Origin | Germany |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | FMMT458TA |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | FMMT458 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 400V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 500mW |
| Maximum DC Collector Current Idc | 225mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 50MHz |
DiodesZetex FMMT458TA NPN Bipolar Transistor delivers high performance for demanding electronic applications. This transistor operates with a maximum DC collector current of 225 mA and can withstand collector-emitter voltages up to 400 V. The device features a surface mount SOT-23 package, making it suitable for modern, compact PCB layouts in commercial and industrial environments.
Designed for robustness and reliability, the FMMT458TA offers a power dissipation of up to 500 mW and works efficiently across a wide temperature range, from -55°C up to 150°C. With a minimum DC current gain (hFE) of 15, the transistor supports strong signal amplification, essential for audio, switching, and signal processing circuits.
Its NPN polarity is ideal for standard switching and amplification uses in electronics manufacturing, laboratory instruments, and industrial automation. The single configuration and AEC-Q101 automotive standard also allow deployment in automotive-grade projects where high voltage tolerance is required.
Maximum DC collector current of 225 mA for versatile circuit designs. Rated at 400 V maximum collector-emitter voltage, suitable for high voltage applications. Compact SOT-23 package ideal for space-constrained PCB designs.
NPN polarity for common switching and amplification tasks. Surface mount configuration for automated assembly. Maximum power dissipation of 500 mW for reliable operation. Operates in a wide temperature range, from -55°C to 150°C.
Minimum DC current gain (hFE) of 15, supporting efficient signal amplification.
Engineered for industrial, laboratory, and automotive applications, this transistor is a reliable solution for power management, signal processing, and advanced electronics. Its compliance with the AEC-Q101 automotive standard further ensures robust performance in vehicle-related systems.
Explore more Bipolar Transistors and other high-performance semiconductor components from DiodesZetex in the Electronics & Electricals category on EnvMart.
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