$1.63
$1.58
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay SQ Rugged Type P-Channel MOSFET, 50 A Maximum Continuous Drain Current, 30 V Drain Source Voltage SQD45P03-12_GE3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SQD45P03-12_GE3 |
| Width | 6.22mm |
| Mount Type | PCB |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.017Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 71W |
| Typical Gate Charge Qg @ Vgs | 55.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed with enhancement mode channel operation for efficient switching.
- Maximum power dissipation rating of 71 W supports high thermal load.
- Low drain-source resistance of 0.017 Ω ensures minimal conduction losses.
- Wide operating temperature range from -55°C to 175°C enables reliable automotive and industrial use.
- Complies with AEC-Q101 and RoHS standards for automotive and environmental safety.
- Maximum gate-source voltage of ±20 V provides robust gate control tolerance.
- Typical gate charge of 55.3 nC at Vgs aids fast switching performance.
- Forward voltage of 1.5 V supports low forward conduction drop.
Product Description
Vishay SQD45P03-12_GE3 is a rugged type P-Channel MOSFET designed for demanding power switching applications. It supports a maximum continuous drain current of 50 A and withstands a maximum drain-source voltage of 30 V. This enhancement mode MOSFET is housed in a 3-pin TO-252 package optimized for printed circuit board (PCB) mounting, making it ideal for compact electronic designs.
The SQ Rugged series MOSFET features a low drain-source resistance (Rds) of 0.017 Ω, minimizing conduction losses and improving efficiency in power management circuits. Its maximum power dissipation rating of 71 W ensures durability under high thermal stress, with operation supported over a wide temperature range from -55°C to 175°C, suitable for both industrial and automotive environments.
Compliant with AEC-Q101 automotive qualification and RoHS environmental standards, this MOSFET meets rigorous quality and safety criteria. The device incorporates a maximum gate-source voltage tolerance of ±20 V allowing reliable switching control, with a typical gate charge of 55.3 nC at Vgs delivering efficient switching speeds.
The compact dimensions (6.73 mm length, 6.22 mm width, and 2.38 mm height) enable integration into space-sensitive power assemblies. Its forward voltage drop of 1.5 V further contributes to energy-efficient conduction in electronic circuits.
Manufactured in Taiwan, Province Of China, this component is suitable for industrial, automotive, and general electronic manufacturing sectors requiring durable, high-current switching elements.
Designed for power switching in industrial and automotive applications. Low Rds(on) reduces power losses for enhanced efficiency. Wide operating temperature range supports harsh environments. Compact TO-252 package provides easy PCB integration.
Meets automotive AEC-Q101 and RoHS compliance requirements. High power dissipation capacity enables robust performance. Explore the Electronics & Electricals category on EnvMart for high-quality semiconductors and MOSFETs that facilitate advanced power management and electronic design solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
It can withstand a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 71 W, allowing it to handle high thermal loads.
The drain-source resistance is 0.017 Ω, which minimizes conduction losses.
The typical gate charge at Vgs is 55.3 nC, aiding in fast switching performance.
It operates over a wide temperature range from -55°C to 175°C, suitable for harsh environments.
This model has dimensions of 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
It is housed in a TO-252 package, optimized for PCB mounting.
It complies with the AEC-Q101 automotive standard, ensuring quality for automotive applications.
The maximum gate-source voltage tolerance is ±20 V, providing robust control.
This model features an enhancement mode P-Channel design.
It meets RoHS environmental standards, ensuring compliance with safety regulations.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$1.63
$1.58
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent