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DiodesZetex P-Channel MOSFET, 30 V, 380 mA, Enhancement Mode, 3-Pin SOT-323 Package DMP31D7LW-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 900μm
Length 2mm
Model DMP31D7LW-7
Width 1.8mm
Mount Type Surface
Series DMP31
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 380mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 1.7Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 0.29W
Typical Gate Charge Qg @ Vgs 0.36nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • Features a surface mount 3-pin SOT-323 package for compact PCB design.
  • Enhancement mode device designed for low on-resistance operation.
  • Can operate within temperature ranges from -55°C up to 150°C.
  • Low input capacitance and ESD protected gate enhance reliability.
  • Capable of dissipating up to 0.29 W of power efficiently.
  • Maximum gate source voltage rating is 20 V, ensuring robust control.
  • Typical gate charge of 0.36 nC supports fast switching applications.
  • Meets automotive standard AEC-Q101 for quality assurance.

Product Description

The DiodesZetex DMP31D7LW-7 is a P-channel enhancement mode MOSFET engineered for efficient power management in compact electronic devices. Rated for a maximum drain source voltage of 30 V and a continuous drain current of 380 mA, this MOSFET suits applications requiring low on-resistance and superior switching performance.

Its surface mount SOT-323 3-pin package enables space-saving PCB layouts, while the device's low input capacitance and ESD protected gate ensure high reliability and stable operation. The MOSFET supports operation in demanding thermal environments, withstanding temperatures from -55°C to 150°C, making it suitable for industrial and automotive applications.

Designed for low power dissipation up to 0.29 W, the DMP31D7LW-7 manages thermal load effectively. The maximum gate source voltage rating of 20 V coupled with a typical gate charge of 0.36 nC enables fast and efficient switching, ideal for power management circuits.

Product dimensions include a length of 2 mm, width of 1.8 mm, and height of 900 μm, supporting miniaturization in advanced designs. Additionally, compliance with automotive standard AEC-Q101 ensures this MOSFET meets stringent quality and reliability standards.

This MOSFET is primarily used in industrial electronics, power management modules, automotive electronics, and various semiconductor applications requiring efficient, reliable switching components.

Features a surface mount 3-pin SOT-323 package for compact PCB design. Enhancement mode device designed for low on-resistance operation. Can operate within temperature ranges from -55°C up to 150°C. Low input capacitance and ESD protected gate enhance reliability.

Capable of dissipating up to 0.29 W of power efficiently. Maximum gate source voltage rating is 20 V, ensuring robust control. Typical gate charge of 0.36 nC supports fast switching applications. Dimensions: length 2 mm, width 1.8 mm, and height 900 µm for compact electronics.

Meets automotive standard AEC-Q101 for quality assurance. Explore more semiconductor products by DiodesZetex on EnvMart for reliable power and control solutions.

DiodesZetex P-Channel MOSFET, 30 V, 380 mA, Enhancement Mode, 3-Pin SOT-323 Package DMP31D7LW-7
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Frequently Asked Questions

The maximum drain source voltage of the DMP31D7LW-7 is 30 V.

This model has a continuous drain current rating of 380 mA.

The dimensions of this MOSFET are 2 mm in length, 1.8 mm in width, and 900 μm in height.

It can dissipate up to 0.29 W of power efficiently.

The DMP31D7LW-7 operates within a temperature range of -55°C to 150°C.

The typical gate charge is 0.36 nC at Vgs.

It features a surface mount 3-pin SOT-323 package.

This model meets the automotive standard AEC-Q101 for quality assurance.

The maximum gate source voltage rating is 20 V.

It is a P-channel enhancement mode MOSFET.

The maximum drain source resistance is 1.7 Ω.

It is suitable for industrial electronics, power management modules, and automotive electronics.

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