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Infineon HEXFET N-Channel MOSFET 210A 60V Enhancement 3-Pin TO-220 IRFB3206PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.67mm |
| Model | IRFB3206PBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 210A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device features enhancement mode channel operation for efficient switching performance.
- Maximum power dissipation is rated at 300W, suitable for high power applications.
- A robust gate source voltage range of -20 to +20V ensures reliability and control.
- Compact dimensions of approximately 10.67mm length, 9.02mm height, and 4.83mm width enable versatile mounting.
- TO-220 through-hole mount type with 3 pins facilitates easy assembly in electronic circuits.
- Typical gate charge at 120nC supports fast switching and reduces losses.
- Operating temperature range is wide from -55°C to 175°C, ensuring durability in harsh environments.
- Low maximum drain source resistance of 3mΩ minimizes conduction losses during operation.
Product Description
Infineon IRFB3206PBF HEXFET N-Channel MOSFET is designed to handle continuous drain currents up to 210A and a maximum drain-source voltage of 60V, packaged in a 3-pin TO-220 form factor. This enhancement mode MOSFET provides excellent switching performance for motor control, power supply rectification, and other power electronic applications.
The device features a maximum power dissipation of 300W, which allows it to operate efficiently in demanding industrial and automotive environments. It possesses a wide gate source voltage range (-20V to +20V) and a typical gate charge of 120nC ensuring low switching losses and precise control.
With dimensions of 10.67mm length, 9.02mm height, and 4.83mm width, the MOSFET is optimized for installation in compact electronic designs. The through-hole TO-220 package type provides robust mechanical and electrical mounting capabilities.
Infractions include a maximum drain-source resistance of only 3mΩ, allowing minimal conduction losses and high efficiency. The device operates reliably across a temperature range from -55°C to 175°C, suitable for industrial, automotive, HVAC, and manufacturing applications.
Infineon’s HEXFET technology ensures durability and quality compliance, making this MOSFET ideal for synchronous rectifiers, motor controls, and other power electronics requiring high efficiency and power density.
The device provides a maximum continuous drain current of 210A. Maximum drain source voltage rating is 60V. Features an enhancement mode with a gate charge of 120nC. Power dissipation up to 300W accommodates high power applications.
Packaged in 3-pin TO-220 through-hole type for ease of use. Operating temperature ranges from -55°C to 175°C for versatile environments. Low drain-source resistance of 3mΩ for efficient conduction. Compact dimensions support versatile electronic designs.
This Infineon IRFB3206PBF MOSFET is widely used in industrial electronics, power management, motor controller circuits, and AC-DC synchronous rectification in power supplies. It combines performance and reliability with compact size and rugged construction.
Explore more MOSFETs and power semiconductor devices in the Electronics & Electricals category at EnvMart for advanced industrial and laboratory solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 210A, making it suitable for high power applications.
The maximum drain-source voltage rating for this MOSFET is 60V, allowing it to handle significant voltage levels in electronic circuits.
It has a maximum power dissipation rating of 300W, which supports its use in demanding applications.
The dimensions of this model are approximately 10.67mm in length, 9.02mm in height, and 4.83mm in width.
It is packaged in a TO-220 through-hole type, which facilitates easy assembly in electronic circuits.
The operating temperature range is from -55°C to 175°C, allowing it to function in various environmental conditions.
The typical gate charge for this MOSFET is 120nC, which helps in achieving fast switching performance.
The maximum gate-source voltage is rated at -20V to +20V, ensuring reliable control during operation.
The maximum drain-source resistance is 3mΩ, which minimizes conduction losses during operation.
This model is suitable for applications such as motor control, power supply rectification, and other power electronic applications.
It features an N-channel enhancement mode, which is designed for efficient switching performance.
This device has a pin count of 3, which is standard for its TO-220 package type.
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