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onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement Mode, 6-Pin SOT-23 Package FDC6321C

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onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement Mode, 6-Pin SOT-23 Package FDC6321C

Name: onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement Mode, 6-Pin SOT-23 Package FDC6321C
Brand: onsemi
SKU: 163118
Price: 0.43 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1mm
Length	3mm
Model	FDC6321C
Width	1.7mm
Mount Type	Surface
Maximum Operating Temperature	+150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	Type P, Type N
Maximum Continuous Drain Current Id	680mA
Maximum Drain Source Voltage Vds	25V
Maximum Drain Source Resistance Rds	1.1mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	900mW
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	8, -8V
Forward Voltage Vf	0.89V
Transistor Configuration	Isolated

Key Features

Isolated transistor configuration suitable for low-voltage enhancements.
Maximum drain-source resistance of 1.1 milliohms ensuring efficient conduction.
Forward voltage of 0.89 V for reduced power loss.
Capable of operating between -55°C to +150°C for wide temperature applications.
Compact SOT-23 package dimensions of 3 mm length and 1.7 mm width.
Enhancement mode MOSFET with typical gate charge of 1.1 nC at Vgs.
Supports maximum gate-source voltage of ±8 V.
Designed with two elements per chip for enhanced performance.

Product Description

onsemi FDC6321C is an isolated 2 Type P and Type N-Channel MOSFET that supports a maximum continuous drain current of 680 mA and a maximum drain-source voltage of 25 V. Encased in a compact 6-pin SOT-23 surface-mount package, it provides an efficient enhancement mode transistor solution for electronic and power semiconductor applications. The device features a low maximum drain-source resistance of 1.1 milliohms and a forward voltage of 0.89 V, minimizing power losses and improving overall device efficiency.

Its operating temperature range from -55°C to +150°C ensures reliability across industrial, commercial, and automotive sectors. The transistor uses a typical gate charge of 1.1 nC at Vgs, with a maximum gate-source voltage of ±8 V, suitable for sensitive gate drive circuits. With two elements per chip, this MOSFET is optimized for low voltage and moderate current tasks in electronic design and power management systems.

Applications include industrial electronics, power management devices, switching power supplies, and telecommunications equipment. The compact SOT-23 package (3 mm × 1.7 mm) supports automated surface mounting, crucial for high-density circuit board assembly.

Isolated transistor configuration suited for low-voltage applications. Enhanced conduction with 1.1 mΩ maximum Rds(on). Forward voltage optimized at 0.89 V to reduce losses. Wide operational temperature range from -55°C to +150°C.

Compact SOT-23 package for space-constrained assemblies. Typical gate charge of 1.1 nC for efficient switching. Maximum gate-source voltage of ±8 V to protect gate integrity. Dual-element chip design for reliable performance.

onsemi provides a robust portfolio of MOSFETs suitable for various industrial and commercial applications, ensuring high efficiency and reliability in modern semiconductor circuits.

Discover more semiconductor and MOSFET products at EnvMart for your electronics and power management projects.