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onsemi NPN Power Transistor, 16 A, 250 V, 3-Pin TO-204, 250 W Maximum Power Dissipation MJ21194G
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | onsemi |
| Height | 20.7mm |
| Length | 39.37mm |
| Model | MJ21194G |
| Width | 26.67mm |
| Mount Type | Through Hole |
| Series | MJ21194 |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 8 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 400V |
| Maximum Power Dissipation Pd | 250W |
| Maximum DC Collector Current Idc | 16A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 4MHz |
| onsemi MJ15003G Transistor, 20 A NPN, 140 V, 2-Pin TO-204Brand | onsemi |
| STMicroelectronics 2ST5949 NPN Bipolar Transistor, 17 A, 250 V, 3-Pin TO-3Brand | STMicroelectronics |
Key Features
- Rated for a maximum power dissipation of 250 W ensuring robust performance.
- Supports a maximum collector-base voltage of 400 V and emitter-base voltage of 5 V.
- Features a minimum DC current gain (hFE) of 8 and a transition frequency of 4 MHz.
- Designed for through-hole mount with a length of 39.37 mm, width of 26.67 mm, and height of 20.7 mm.
- Operates reliably within a temperature range of -65°C to 200°C suitable for industrial environments.
Product Description
onsemi MJ21194G is a high-power NPN transistor designed for demanding electronic and industrial semiconductor applications. It features a maximum DC collector current of 16 A and a collector-emitter voltage rating of 250 V, enabling effective power handling in circuits requiring robust switching or amplification.
The transistor comes in a rugged 3-Pin TO-204 package configured for through-hole mounting, measuring 39.37 mm in length, 26.67 mm in width, and 20.7 mm in height. It supports a high maximum power dissipation of 250 W, allowing it to sustain significant thermal loads during operation.
Electrical characteristics include a maximum collector-base voltage of 400 V, emitter-base voltage of 5 V, and a minimum DC current gain of 8, with a transition frequency of 4 MHz. The device is optimized for reliability with an operating temperature range spanning from -65°C to 200°C, making it suitable for harsh industrial and power electronics applications.
This single transistor configuration suits a variety of applications such as power conversion, motor control, and amplifier circuits in industrial and manufacturing setups. Manufactured in Mexico, the MJ21194G does not carry automotive-specific standards but is validated for commercial and industrial use.
Rated for a maximum power dissipation of 250 W ensuring robust performance. Supports a maximum collector-base voltage of 400 V and emitter-base voltage of 5 V. Features a minimum DC current gain (hFE) of 8 and a transition frequency of 4 MHz.
Designed for through-hole mount with a length of 39.37 mm, width of 26.67 mm, and height of 20.7 mm. Operates reliably within a temperature range of -65°C to 200°C suitable for industrial environments. Explore more onsemi transistors and semiconductor solutions on EnvMart for advanced industrial applications.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum power dissipation of this model is rated at 250 W, allowing it to handle significant thermal loads during operation.
It has a maximum collector-emitter voltage rating of 250 V and a maximum collector-base voltage rating of 400 V.
The maximum DC collector current for this transistor is 16 A, making it suitable for high-current applications.
This model features a minimum DC current gain (hFE) of 8, which is important for amplification applications.
The transition frequency of this transistor is 4 MHz, relevant for high-frequency applications.
The dimensions of the TO-204 package are 39.37 mm in length, 26.67 mm in width, and 20.7 mm in height.
It operates reliably within a temperature range of -65°C to 200°C, suitable for harsh industrial environments.
This model is designed for through-hole mounting, which is common in many electronic applications.
The transistor is of NPN polarity, which is a common configuration for various applications.
This transistor is suitable for applications such as power conversion, motor control, and amplifier circuits in industrial settings.
The MJ21194G is manufactured in Mexico, ensuring compliance with commercial and industrial standards.
The maximum emitter-base voltage (VEBO) for this transistor is 5 V, which is critical for its operation.
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