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onsemi N-Channel MOSFET 235A 60V Enhancement Mode Surface Mount PQFN 8-Pin NTMFSC1D6N06CL

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onsemi N-Channel MOSFET 235A 60V Enhancement Mode Surface Mount PQFN 8-Pin NTMFSC1D6N06CL

Name: onsemi N-Channel MOSFET 235A 60V Enhancement Mode Surface Mount PQFN 8-Pin NTMFSC1D6N06CL
Brand: onsemi
SKU: 161670
Price: 1.39 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	950μm
Length	6mm
Model	NTMFSC1D6N06CL
Width	5mm
Mount Type	Surface
Series	NTMFS
Maximum Operating Temperature	150°C
Package Type	PQFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	235A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2.3mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	166W
Typical Gate Charge Qg @ Vgs	91nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Advanced Power Trench® process ensures low RDS(on) and excellent switching performance.
8-pin PQFN package supports surface mounting with improved thermal dissipation.
Maximum power dissipation of 166W supports robust power handling.
Operates efficiently between -55°C minimum and 150°C maximum temperatures.
Low typical gate charge of 91nC minimizes switching losses.
Maximum gate-source voltage of 20V for reliable gate control.
Compact dimensions of 6mm length, 5mm width, and 950μm height.
Designed for synchronous rectification, motor switching, and load switching applications.

Product Description

The onsemi NTMFSC1D6N06CL is an N-Channel MOSFET semiconductor offering a maximum continuous drain current of 235A and a drain-source voltage rating of 60V. Constructed using onsemi's advanced Power Trench® technology, this device delivers ultra-low RDS(on) resistance while maintaining superior switching performance. The 8-pin PQFN surface mount package allows for efficient heat dissipation through top and bottom surfaces, enhancing thermal management.

The MOSFET operates effectively in demanding environments with an operating temperature range from -55°C to 150°C. Featuring a maximum power dissipation of 166W and a typical gate charge of 91nC, it is optimized for high efficiency and minimal conduction and switching losses.

Compact in size, measuring 6 mm in length, 5 mm in width, and 950 μm in height, the NTMFSC1D6N06CL is suitable for integration into space-constrained electronic designs. Its maximum gate-source voltage of 20V ensures reliable control in switching and load management circuits.

Applications include synchronous rectification in AC-DC and DC-DC power supplies, motor switching, and general load switching duties. Its low conduction loss and reduced capacitances enable improved overall system efficiency and lower thermal stress.

Advanced Power Trench® technology for low RDS(on) and high performance. 8-Pin PQFN surface mount package with enhanced thermal characteristics. High continuous drain current rating of 235A for demanding power applications.

Wide operating temperature capability from -55°C to 150°C. High maximum power dissipation rating of 166W. Low typical gate charge of 91nC for efficient switching. Compact physical dimensions facilitate integration in tight layouts.

Suitable for synchronous rectifiers, motor drives, and load switches in industrial and commercial electronics.

This MOSFET is ideal for industrial, power supply, automotive, and motor control applications requiring high efficiency and excellent thermal management. Explore similar products in the MOSFET category on EnvMart for comprehensive semiconductor solutions.