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onsemi NPN Transistor, 600 mA, 40 V, 6-Pin SOT-363, Surface Mount MBT2222ADW1T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model MBT2222ADW1T1G
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363Brand onsemi

Key Features

  • Maximum DC collector current of 600 mA for strong switching applications.
  • Collector-emitter voltage rating of 40 V ensuring reliable operation under moderate voltages.
  • Surface mount package type SOT-363 allows compact PCB layout.
  • High transition frequency of 100 MHz supports high-speed switching.
  • Automotive qualified to AEC-Q101 standard for enhanced reliability.
  • Operating temperature range from -55°C to 150°C ensuring wide environmental tolerance.
  • Minimum DC current gain (hFE) of 35 for effective amplification.
  • Six-pin isolated transistor configuration providing easy integration.

Product Description

onsemi MBT2222ADW1T1G is a general purpose NPN bipolar junction transistor designed for electronic switching and amplification applications in compact surface mount form factor. Rated to handle a maximum collector current of 600 mA and collector-emitter voltage of 40 V, it fits well in signal and low power digital circuits.

The transistor comes in a 6-pin SOT-363 package suitable for surface mounting, ensuring minimal footprint on printed circuit boards. Its isolated transistor configuration eases PCB layout and circuit design for various electronic products.

This device offers a transition frequency of 100 MHz, making it well-suited for medium-frequency switching and amplification tasks in automotive and industrial sectors. It meets the AEC-Q101 automotive standard, indicating its enhanced reliability and suitability for harsh automotive environments.

Operating temperature ranges from -55°C to 150°C allow deployment in diverse temperature conditions. Its minimum DC current gain of 35 supports effective signal amplification, while a maximum power dissipation of 150 mW ensures safe thermal operation.

Dimensionally, the transistor is compact with a length and width of 2.2 mm each and a height of 1.1 mm, enabling space-efficient electronic assemblies. Maximum DC collector current: 600 mA. Maximum collector-emitter voltage: 40 V.

Surface mount SOT-363 package with 6 pins. High transition frequency of 100 MHz. Automotive qualified to AEC-Q101 standard. Operating temperature range: -55°C to 150°C. Minimum DC current gain: 35. Maximum power dissipation: 150 mW.

Compact dimensions: 2.2 mm x 2.2 mm x 1.1 mm.

This transistor is ideal for use in industrial electronics, automotive electronics, telecommunications, and consumer electronic equipment requiring reliable switching and amplification performance in a compact surface mount package.

Explore more semiconductor and transistor products designed for rigorous industrial and automotive applications on EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi NPN Transistor, 600 mA, 40 V, 6-Pin SOT-363, Surface Mount MBT2222ADW1T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA, making it suitable for strong switching applications.

It has a collector-emitter voltage rating of 40 V, ensuring reliable operation under moderate voltages.

This transistor comes in a 6-pin SOT-363 surface mount package, allowing for a compact PCB layout.

The transition frequency is 100 MHz, which supports high-speed switching applications.

It operates within a temperature range of -55°C to 150°C, allowing for deployment in diverse environmental conditions.

The minimum DC current gain (hFE) is 35, which supports effective signal amplification.

The maximum power dissipation is 150 mW, ensuring safe thermal operation during use.

It is qualified to the AEC-Q101 automotive standard, indicating enhanced reliability for automotive applications.

The dimensions of this model are 2.2 mm x 2.2 mm x 1.1 mm, making it compact for electronic assemblies.

This model features an isolated transistor configuration, which facilitates easy integration into circuit designs.

The maximum collector-base voltage (VCBO) is 75 V, providing additional operational flexibility.

It is suitable for use in industrial electronics, automotive electronics, telecommunications, and consumer electronic equipment requiring reliable switching and amplification.

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