onsemi N-Channel MOSFET 36 A 650 V Enhancement Mode 3-Pin TO-220 NTP095N65S3HF

The onsemi NTP095N65S3HF is a high voltage N-Channel MOSFET designed for advanced power management with a maximum continuous drain current of 36 A and a drain-source voltage rating of 650 V. Encapsulated in a 3-pin TO-220 through-hole package, this device utilizes enhancement mode operation to provide reliable and efficient switching performance suitable for a wide range of industrial and commercial electronic applications.

Featuring SuperFET III technology, it employs charge balance technology that delivers outstanding low on-resistance and reduced gate charge, enhancing efficiency and reducing conduction losses. The MOSFET supports a typical gate charge of 66 nC at 6 V gate-source voltage, facilitating fast switching capabilities with minimal power dissipation.

With a maximum power dissipation of 272 W, this MOSFET ensures robust operation under demanding conditions. Its operating temperature span of -55°C to 150°C and maximum gate-source voltage of 30 V further affirm its suitability for harsh environments. The device's compact dimensions of 10.67 mm length, 9.4 mm height, and 4.7 mm width enable integration into space-critical designs.

The MOSFET’s low maximum drain-source resistance of 95 mΩ combined with a forward voltage drop of 1.3 V helps minimize energy loss. It also features optimized reverse recovery performance of the body diode, improving system reliability and reducing the need for additional components.

This power MOSFET is ideal for applications in power systems aiming at miniaturization and higher efficiency, including industrial control equipment, power supplies, and automotive electronics that do not require specific automotive standards.

This enhancement mode MOSFET is housed in a 3-pin TO-220 through-hole package. The device features a low maximum drain-source resistance of 95 mΩ. It provides a typical gate charge of 66 nC at 6 V gate-source voltage. Maximum power dissipation is rated at 272 W ensuring efficient operation.

Operating temperature range spans from -55°C to 150°C, suitable for industrial use. Maximum gate-source voltage is 30 V, maintaining robustness in switching applications. The forward voltage drop is 1.3 V, contributing to reduced conduction losses.

Compact dimensions of 10.67 mm length, 9.4 mm height, and 4.7 mm width allow for space-constrained designs. Incorporates SuperFET III technology with charge balance for optimized on-resistance and switching. Explore more products in the MOSFET category at EnvMart to find components tailored to your specific electronic design needs.