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Vishay N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-220, 179W Power Dissipation SIHP22N60EF-GE3

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Vishay N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-220, 179W Power Dissipation SIHP22N60EF-GE3

Name: Vishay N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-220, 179W Power Dissipation SIHP22N60EF-GE3
Brand: Vishay
SKU: 158474

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	9.01mm
Length	10.51mm
Model	SIHP22N60EF-GE3
Width	4.65mm
Mount Type	Through Hole
Series	SiHP22N60EF
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	19A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	182mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	179W
Typical Gate Charge Qg @ Vgs	48nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Enhancement mode channel design optimized for power applications.
TO-220 package ensures reliable through-hole mounting.
Maximum power dissipation of 179 W for robust performance.
Low on-resistance of 182 mΩ minimizes conduction losses.
Operating temperature range from -55°C to 150°C.
Maximum gate-source voltage rating of 30 V for gate control stability.
Typical gate charge of 48 nC for efficient switching.
Forward voltage drop of 1.2 V with fast body diode.

Product Description

Vishay SIHP22N60EF-GE3 is an N-Channel Enhancement MOSFET designed for industrial power electronics applications. It supports a high continuous drain current of 19 A and withstands drain-source voltages up to 600 V, packaged in a rugged TO-220 form factor with three pins suitable for through-hole mounting.

With a maximum power dissipation of 179 W and low drain-source resistance of 182 mΩ, this MOSFET is engineered for high efficiency and reliability in switching applications. Its operating temperature range from -55°C to 150°C ensures stable performance under demanding environmental conditions.

The device features a maximum gate-source voltage of 30 V, providing robust gate control, and a typical gate charge of 48 nC to facilitate fast switching speeds. The low forward voltage of 1.2 V across the body diode minimizes losses during conduction.

Measured physical dimensions are 10.51 mm in length, 4.65 mm in width, and 9.01 mm in height, allowing for compact circuit layouts. Enhancement mode N-Channel MOSFET suitable for power management. High current rating ideal for server, telecom, and SMPS applications.

Fast switching with low figure-of-merit Ron x Qg reduces power consumption. Robust thermal characteristics supporting up to 179 W dissipation. Wide operating temperature range from -55°C to 150°C. Compact TO-220 3-pin packaging for easy integration.

Low input capacitance aids in efficient switching performance. Designed for power factor correction and high-frequency power supply designs.

This MOSFET is commonly used in industrial power supplies, telecom power systems, and switch mode power converters. It offers reliable performance with reduced switching and conduction losses, perfect for demanding electronics manufacturing and repair tasks.

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