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Vishay N-Channel MOSFET, 14 A, 500 V Enhancement Mode, 3-Pin TO-247 IRFP450APBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP450APBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP450A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Enhancement mode type N-channel MOSFET ensures efficient power handling.
- Features a 3-pin TO-247 package suitable for through-hole mounting.
- Maximum power dissipation rating of 190 W for robust operation.
- Low maximum drain source resistance of 400 mΩ for minimal conduction losses.
- Typical gate charge of 64 nC for fast switching capabilities.
- Operating temperature ranges from -55°C to 150°C industrial grade.
- Maximum gate-source voltage of ±30 V for versatile control applications.
- Compact dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width.
Product Description
Vishay IRFP450APBF is a high-performance N-Channel MOSFET designed for power electronics applications. Rated for a maximum continuous drain current of 14 A and a drain-source voltage of 500 V, it offers reliable operation under demanding electrical conditions.
The device is packaged in a TO-247 form factor with 3 pins, supporting through-hole mounting for easy integration into industrial and laboratory equipment. The enhancement channel mode design enables efficient switching with a low gate charge of 64 nC, ensuring rapid turn-on and turn-off times.
This MOSFET boasts a maximum power dissipation of 190 W, supporting thermal reliability at operating temperatures from -55°C up to 150°C, suitable for harsh industrial environments. The low maximum drain-source resistance (Rds(on)) of 400 mΩ contributes to superior conduction efficiency, minimizing energy losses and heat generation.
The maximum gate-source voltage rating of ±30 V provides operational flexibility in various control circuits, while the forward voltage drop of 1.4 V ensures minimal voltage loss during conduction periods.
Its compact physical dimensions (Height: 20.7 mm, Length: 15.87 mm, Width: 5.31 mm) make it suitable for space-constrained designs within manufacturing, power conversion, and automotive electronics.
This discrete semiconductor is ideal for applications in power supplies, motor drivers, and industrial automation systems, where reliable switching and thermal stability are mandatory.
Enhancement mode N-Channel MOSFET with high voltage and current ratings. TO-247 package with through-hole mount compatibility and 3 pins for straightforward integration. High power dissipation capability of 190 W for demanding thermal environments.
Low Rds(on) of 400 mΩ to reduce conduction losses. Wide operating temperature range from -55°C to 150°C for industrial use. Gate charge optimized for fast switching performance at 64 nC. Maximum gate-source voltage of ±30 V for diverse control configurations.
Compact device dimensions support tight layout designs. Explore more Vishay MOSFETs and semiconductor solutions on EnvMart for industrial, laboratory, manufacturing, and power electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A.
It has a maximum drain-source voltage rating of 500 V.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
The maximum power dissipation rating is 190 W.
The typical gate charge is 64 nC, which allows for fast switching capabilities.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage is ±30 V.
It is packaged in a TO-247 form factor, suitable for through-hole mounting.
The maximum drain-source resistance (Rds(on)) is 400 mΩ.
This model features an enhancement mode type N-channel.
It is suitable for applications in power supplies, motor drivers, and industrial automation systems.
This MOSFET has a total of 3 pins.
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