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Vishay N-Channel MOSFET, 14 A, 100 V, Enhancement Mode, 3-Pin TO-220 IRF530PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF530PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
Key Features
- This MOSFET provides a maximum continuous drain current of 14 amperes.
- The maximum drain-source voltage rating is 100 volts.
- It features a low maximum drain-source resistance of 160 milliohms, improving efficiency.
- The device supports a maximum power dissipation of 88 watts for reliable operation.
- Its operating temperature range spans from -55°C minimum to 175°C maximum.
- The typical gate charge at Vgs is 26 nanocoulombs, enabling fast switching.
- The package type is TO-220 with 3 pins, suitable for easy mounting and cooling.
- The MOSFET uses an enhancement mode channel for controlled switching applications.
Product Description
Vishay IRF530PBF is a high-performance N-Channel MOSFET designed for power switching applications. It is housed in a 3-pin TO-220 package optimized for through-hole mounting and effective heat dissipation. Rated for a maximum continuous drain current of 14 amperes and a drain-source voltage of 100 volts, it suits a wide range of industrial, laboratory, and commercial electronic circuits.
The device operates on enhancement mode channel technology, ensuring reliable and efficient switching performance. It features a low drain-source resistance of 160 milliohms, enabling higher efficiency and reduced power loss in load switching. With a maximum power dissipation rating of 88 watts, it can handle demanding thermal conditions with robust electrical performance.
Operating across a wide temperature range from -55°C to 175°C, the IRF530PBF is suitable for harsh environments and industrial-grade electronics. Its typical gate charge of 26 nanocoulombs at rated gate voltage supports fast switching speeds, making it ideal for high-frequency applications.
The TO-220 package with 3 pins facilitates easy mounting and integration into power management and control systems such as motor drivers, power supplies, and inverter circuits. Its forward voltage of 2.5 V allows efficient conduction during operation.
It meets standard semiconductor norms and is sourced from China. This MOSFET provides a maximum continuous drain current of 14 amperes. The maximum drain-source voltage rating is 100 volts. Low maximum drain-source resistance of 160 milliohms.
Maximum power dissipation of 88 watts. Operating temperature range from -55°C to 175°C. Typical gate charge of 26 nanocoulombs enabling fast switching. TO-220 3-pin package for through-hole mounting. Enhancement mode N-channel configuration.
Forward voltage of 2.5 volts. Ideal for power management and motor control applications. Browse Vishay MOSFETs and other semiconductor products on EnvMart for industrial-grade electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 amperes.
It has a maximum drain-source voltage rating of 100 volts.
The low maximum drain-source resistance is 160 milliohms, which improves efficiency.
This MOSFET supports a maximum power dissipation of 88 watts.
The operating temperature range spans from -55°C to 175°C.
The typical gate charge at Vgs is 26 nanocoulombs, enabling fast switching.
It is housed in a TO-220 package type with 3 pins, suitable for through-hole mounting.
The maximum gate-source voltage for this unit is -20 to +20 volts.
The forward voltage of this model is 2.5 volts.
This device uses an N-channel configuration, which is typical for enhancement mode applications.
The dimensions of this model are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
This MOSFET is suitable for power management and motor control applications.
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