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Vishay N-Channel MOSFET, 20 V, -3.73 A Continuous Drain Current, Depletion Mode, 7-Pin PowerPAK SC-70W-6L SQA446CEJW-T1_GE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Length 2.05mm
Model SQA446CEJW-T1_GE3
Width 2.05mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type PowerPAK SC-70W-6L
Minimum Operating Temperature -55°C
Pin Count 7
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id -3.73A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 0.02Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 13.6W
Typical Gate Charge Qg @ Vgs 5.1nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf 1.2V

Key Features

  • Depletion mode channel type ensures reliable operation in high power density applications.
  • Maximum drain-source resistance of 0.02 ohms provides efficient conduction.
  • Typical gate charge of 5.1 nanocoulombs allows for fast switching performance.
  • Operates within a temperature range from -55°C to 125°C, meeting automotive AEC-Q101 standard.
  • Forward voltage of 1.2 V supports low power loss during conduction.
  • Surface mount package type enhances compact design integration.
  • 7-pin PowerPAK SC-70W-6L package optimizes thermal dissipation and mounting efficiency.

Product Description

Vishay SQA446CEJW-T1_GE3 is a high-performance N-Channel MOSFET designed for automotive and industrial applications requiring robust low-voltage switching with depletion mode operation. This component supports a maximum continuous drain current of -3.73 A and withstands drain-source voltages up to 20 V, making it suitable for power density demanding circuits.

Equipped with a 7-pin PowerPAK SC-70W-6L surface mount package, it provides efficient thermal management and compact integration in PCB assemblies. The device exhibits a low drain-source resistance of 0.02 ohms and typical gate charge of 5.1 nanocoulombs at 8 V gate voltage, enabling fast switching with low conduction losses.

Designed to meet stringent automotive standards (AEC-Q101), it operates reliably across a wide temperature spectrum from -55°C to 125°C. The forward voltage of 1.2 V ensures minimal voltage drop and power dissipation under load conditions.

Depletion mode channel operation for high power density use cases. Compact 7-pin PowerPAK SC-70W-6L surface mount package. Low resistance and typical gate charge ensure efficient switching. Wide operating temperature range including automotive grade.

Meets AEC-Q101 standard for automotive quality assurance. Optimized for high power density and industrial electronics applications. Suitable for use in industrial power management and switching circuits. This Power MOSFET is ideal for industrial, automotive, and embedded electronic systems where compact size, low loss, and high continuous current capability are essential.

Explore additional Vishay semiconductor components and discrete power devices in our Electronics & Electricals catalog at EnvMart.

Vishay N-Channel MOSFET, 20 V, -3.73 A Continuous Drain Current, Depletion Mode, 7-Pin PowerPAK SC-70W-6L SQA446CEJW-T1_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is -3.73 A.

It can withstand a maximum drain-source voltage of 20 V.

The typical gate charge at 8 V gate voltage is 5.1 nanocoulombs.

The dimensions of the package are 2.05 mm in length and 2.05 mm in width.

This MOSFET operates within a temperature range from -55°C to 125°C.

The maximum drain-source resistance is 0.02 ohms.

It meets the AEC-Q101 automotive standard.

The forward voltage is 1.2 V.

This model supports surface mount type installation.

The package has 7 pins.

The maximum power dissipation is 13.6 W.

It operates in depletion mode.

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