World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi N-Channel MOSFET 80 V, 103 A, Enhancement Mode, 5-Pin DFN Package NVMFS6H824N

Free Delivery in India | Lowest Global Shipping Charges

onsemi N-Channel MOSFET 80 V, 103 A, Enhancement Mode, 5-Pin DFN Package NVMFS6H824N

Name: onsemi N-Channel MOSFET 80 V, 103 A, Enhancement Mode, 5-Pin DFN Package NVMFS6H824N
Brand: onsemi
SKU: 157225



Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	Malaysia
Brand	onsemi
Height	1.05mm
Length	5.1mm
Model	NVMFS6H824N
Width	6.1mm
Mount Type	Surface
Series	NVMFS6H824N
Maximum Operating Temperature	175°C
Package Type	DFN
Minimum Operating Temperature	-55°C
Pin Count	5
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	103A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	4.5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	115W
Typical Gate Charge Qg @ Vgs	38nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Designed for automotive power applications in compact 5x6 mm footprint.
Low drain-source resistance of 4.5 mΩ minimizes conduction losses.
Supports maximum continuous drain current of 103 A and power dissipation of 115 W.
Enhancement mode operation with maximum gate-source voltage of 20 V and gate charge of 38 nC.
Wide operating temperature range from -55°C to 175°C for reliable performance.
Surface mount DFN package ensures efficient thermal management.
Automotive qualified per AEC-Q101 standard for high reliability.
Low forward voltage of 1.2 V enables efficient switching.

Product Description

onsemi NVMFS6H824N is an N-Channel Enhancement Mode MOSFET offering a maximum continuous drain current of 103 A and a maximum drain-source voltage of 80 V. Packaged in a compact 5-pin DFN (Dual Flat No-Lead) surface mount package measuring 5.1 mm in length, 6.1 mm in width, and 1.05 mm in height, this device is designed for demanding automotive and industrial power switching applications.

The device features a low maximum drain-source resistance (Rds) of 4.5 mΩ, reducing conduction losses and improving efficiency in power management circuits. Its typical gate charge is 38 nC at Vgs, aiding in minimizing driver losses during switching.

Engineered for robust performance, the MOSFET supports a maximum power dissipation of 115 W and withstands operating temperatures ranging from -55°C to 175°C. The maximum gate-source voltage rating is 20 V, and the device has a low forward voltage of 1.2 V, suitable for high-efficiency switching power supplies and motor controls.

This MOSFET complies with the automotive standard AEC-Q101, ensuring high reliability and suitability for critical automotive environments where performance and safety are paramount. The device's wettable flank option allows for enhanced optical inspection, simplifying quality assurance processes.

Typical applications include switching power supplies, DC/DC converters, high and low side power switches, motor control modules, and load switches in 48 V systems and other automotive electronics. Its small footprint supports compact, efficient PCB designs in automotive and industrial sectors.

Compact 5x6 mm DFN surface mount package enables space-saving designs. Low Rds(on) reduces conduction losses for higher efficiency. High continuous drain current up to 103 A suitable for robust power handling. Wide temperature range and automotive qualification ensure reliable operation.

Low gate charge optimizes switching speed and minimizes driver requirements. Wettable flank option for improved inspection and quality control. Suitable for switching power supplies, motor control, and 48 V automotive systems.

The onsemi NVMFS6H824N MOSFET is an advanced component that delivers a combination of high performance, reliability, and compact design for demanding electronic applications. Explore more products in the MOSFET category on EnvMart for comprehensive semiconductor solutions.