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Nexperia High Voltage 100 mA NPN Transistor, 300 V, 4-Pin SOT-223 Package PZTA42,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.8mm
Length 6.7mm
Model PZTA42,115
Width 3.7mm
Mount Type Surface
Series PZTA42
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 1.2W
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
onsemi PZTA42T1G Bipolar Transistor, 50 mA NPN, 300 V, 4-Pin SOT-223Brand onsemi

Key Features

  • This transistor provides reliable performance with a maximum power dissipation of 1.2 W.
  • It operates over a wide temperature range from -65°C to 150°C.
  • The device offers a minimum DC current gain of 25 and a transition frequency of up to 50 MHz.
  • Compact form factor with dimensions 6.7 mm length, 3.7 mm width, and 1.8 mm height.
  • Constructed with surface mount technology suited for automated assembly.
  • Complies with RoHS standards ensuring environmental safety.
  • Designed and manufactured for high voltage, low current electronic circuit applications.

Product Description

Nexperia PZTA42,115 is a high voltage NPN bipolar transistor suitable for various industrial and electronic applications requiring efficient switching and signal amplification. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 300 V, making it ideal for high voltage circuits.

This transistor is housed in a 4-pin SOT-223 surface mount package, enabling compact PCBs and streamlined manufacturing processes. With a maximum power dissipation of 1.2 W, it adequately handles moderate power levels in demanding environments.

The device operates reliably from -65°C up to 150°C, making it suitable for harsh environmental conditions. It has a minimum DC current gain (hFE) of 25 and a transition frequency of 50 MHz, ensuring responsive operation in analog and switching circuits.

Typical applications include industrial power supply regulation, signal amplification, and switching in control and instrumentation systems. The transistor meets RoHS environmental standards, affirming its compliance with modern electronic manufacturing requirements.

Dimensions of the device are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height, enabling easy integration into compact electronic assemblies. This transistor provides reliable performance with a maximum power dissipation of 1.2 W.

It operates over a wide temperature range from -65°C to 150°C. The device offers a minimum DC current gain of 25 and a transition frequency of up to 50 MHz. Compact form factor with dimensions 6.7 mm length, 3.7 mm width, and 1.8 mm height.

Constructed with surface mount technology suited for automated assembly. Complies with RoHS standards ensuring environmental safety. Designed and manufactured for high voltage, low current electronic circuit applications.

Explore a wide range of Bipolar Transistors and semiconductor components for electronics manufacturing and design projects at EnvMart.

Nexperia High Voltage 100 mA NPN Transistor, 300 V, 4-Pin SOT-223 Package PZTA42,115
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Frequently Asked Questions

The maximum collector-emitter voltage rating for this transistor is 300 V.

This model can handle a maximum DC collector current of 100 mA.

The dimensions of the PZTA42,115 transistor are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

The minimum DC current gain (hFE) for this transistor is 25.

The maximum power dissipation for this transistor is 1.2 W.

This model operates over a wide temperature range from -65°C to 150°C.

The transition frequency of the PZTA42,115 is up to 50 MHz.

This transistor uses a 4-pin SOT-223 package type.

The mounting type for this transistor is surface mount.

This transistor complies with RoHS standards, ensuring environmental safety.

The maximum emitter-base voltage (VEBO) for this model is 6 V.

The PZTA42,115 is suitable for industrial power supply regulation, signal amplification, and switching in control and instrumentation systems.

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