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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | PZTA42,115 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | PZTA42 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 300V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 300V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 50MHz |
| onsemi PZTA42T1G Bipolar Transistor, 50 mA NPN, 300 V, 4-Pin SOT-223Brand | onsemi |
Nexperia PZTA42,115 is a high voltage NPN bipolar transistor suitable for various industrial and electronic applications requiring efficient switching and signal amplification. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 300 V, making it ideal for high voltage circuits.
This transistor is housed in a 4-pin SOT-223 surface mount package, enabling compact PCBs and streamlined manufacturing processes. With a maximum power dissipation of 1.2 W, it adequately handles moderate power levels in demanding environments.
The device operates reliably from -65°C up to 150°C, making it suitable for harsh environmental conditions. It has a minimum DC current gain (hFE) of 25 and a transition frequency of 50 MHz, ensuring responsive operation in analog and switching circuits.
Typical applications include industrial power supply regulation, signal amplification, and switching in control and instrumentation systems. The transistor meets RoHS environmental standards, affirming its compliance with modern electronic manufacturing requirements.
Dimensions of the device are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height, enabling easy integration into compact electronic assemblies. This transistor provides reliable performance with a maximum power dissipation of 1.2 W.
It operates over a wide temperature range from -65°C to 150°C. The device offers a minimum DC current gain of 25 and a transition frequency of up to 50 MHz. Compact form factor with dimensions 6.7 mm length, 3.7 mm width, and 1.8 mm height.
Constructed with surface mount technology suited for automated assembly. Complies with RoHS standards ensuring environmental safety. Designed and manufactured for high voltage, low current electronic circuit applications.
Explore a wide range of Bipolar Transistors and semiconductor components for electronics manufacturing and design projects at EnvMart.
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