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onsemi Transistor PNP 3-Pin SOT-23 -100 mA, -50 V, Maximum Power Dissipation 338 mW MMUN2111LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMUN2111LT1G
Width 1.4mm
Mount Type Surface
Series MMUN2111
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 35
Transistor Polarity PNP
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 338mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Nexperia PDTA114ET,215 Digital Transistor, -100 mA PNP, -50 V, 3-Pin SOT-23Brand Nexperia
onsemi MMUN2111LT1G Transistor, -100 mA PNP, -50 V, 3-Pin SOT-23Brand onsemi

Key Features

  • The device supports a maximum DC collector current of -100 mA.
  • Maximum collector-emitter voltage is rated at -50 V for reliable performance.
  • It has a minimum DC current gain (hFE) of 35 ensuring sufficient amplification.
  • The maximum power dissipation is 338 mW supporting moderate power levels.
  • The transistor is equipped with a monolithic bias network to reduce external components.
  • Its operating temperature range extends up to 150°C for robust thermal performance.
  • The package dimensions are 3.04 mm length, 1.4 mm width, and 1.11 mm height.
  • The transistor configuration is single and mount type is surface mount.

Product Description

onsemi MMUN2111LT1G transistor is a PNP type bipolar transistor designed for efficient surface mount electronic applications. Featuring a compact 3-pin SOT-23 package, this transistor is ideal for use in automotive, industrial, and general-purpose electronics where space saving and integration of bias resistors are critical.

This transistor supports a maximum DC collector current of -100 mA and a maximum collector-emitter voltage rating of -50 V, providing robust switching and amplification capabilities. The device’s minimum DC current gain (hFE) is 35, ensuring reliable signal control in low to medium power circuits.

The device incorporates a monolithic bias network with series base and base-emitter resistors integrated into one package, which simplifies circuit design by eliminating the need for multiple discrete resistors. This results in reduced board space and fewer components, lowering overall system cost and enhancing reliability.

With a maximum power dissipation of 338 mW and operating temperature up to 150°C, MMUN2111LT1G is engineered for durability in demanding conditions. Its compact dimensions of length 3.04 mm, width 1.4 mm, and height 1.11 mm allow for easy placement on PCB layouts.

This transistor complies with the AEC-Q101 automotive standard, making it suitable for automotive electronic systems and other high-reliability applications requiring stringent quality standards.

The device reduces component count by integrating bias resistors and transistor into one compact package. It simplifies circuit design and reduces PCB real estate requirements. PNP transistor polarity suits switching and amplification tasks in various circuits.

Designed for surface mount technology with a common SOT-23 footprint. Automotive grade ensures reliability in harsh environmental conditions. Robust electrical parameters enable usage in general-purpose amplification and switching.

Compact package dimensions facilitate integration into miniaturized electronic assemblies. High maximum operating temperature enhances thermal resilience.

This onsemi MMUN2111LT1G transistor is a reliable choice for electronic engineers needing an efficient, integrated PNP transistor with bias resistors in compact SOT-23 packaging. Explore more Bipolar Transistors and semiconductor components at EnvMart for your varied electronic requirements.

onsemi Transistor PNP 3-Pin SOT-23 -100 mA, -50 V, Maximum Power Dissipation 338 mW MMUN2111LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA.

The maximum collector-emitter voltage rating is -50 V.

This transistor has a minimum DC current gain (hFE) of 35.

The maximum power dissipation for this model is 338 mW.

The package dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

The operating temperature range extends up to 150°C.

This model uses surface mount technology.

This transistor complies with the AEC-Q101 automotive standard.

The transistor configuration is single.

The transistor polarity is PNP.

The integrated monolithic bias network simplifies circuit design by reducing the need for multiple discrete resistors, thus saving board space and enhancing reliability.

This transistor is suitable for automotive, industrial, and general-purpose electronics applications where space-saving and integration of bias resistors are critical.

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